Enhancing the performance of CZTSSe solar cells with Ge alloying

Guo, Qing; Ford, Grayson M.; Yang, Wei-Chang; Hages, Charles J.; Hillhouse, Hugh W.; Agrawal, Rakesh

doi:10.1016/j.solmat.2012.05.039

Cited by 192 publications

(202 citation statements)

References 16 publications

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“…Guo et al found that increasing the thickness of the nanoparticle precursor film does not lead to an increasing thickness of the large grained film, but only in an increasing thickness of the remaining nanoparticle layer. 7 We suggest that an increasing density of carbon in the nanoparticle layer near the interface to the large grained layer may not only block the merging of the nanoparticles, but also inhibit the outdiffusion of the cations, leaving some of the cations trapped in the lower part of the nanoparticle layer. If this is the case, the synthesis of thicker films of large grains from nanoparticles prerequisites a reduction of the carbon content of the precursor film.…”

Section: Growth Modelmentioning

confidence: 88%

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors

Mainz

Walker

Schmidt

et al. 2013

Phys. Chem. Chem. Phys.

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The selenization of Cu-Zn-Sn-S nanocrystals is a promising route for the fabrication of low-cost thin film solar cells. However, the reaction pathway of this process is not completely understood. Here, the evolution of phase formation, grain size, and elemental distributions is investigated during the selenization of Cu-Zn-Sn-S nanoparticle precursor thin films by synchrotron-based in situ energy-dispersive X-ray diffraction and fluorescence analysis as well as by ex situ electron microscopy. The precursor films are heated in a closed volume inside a vacuum chamber under presence of selenium vapor while diffraction and fluorescence signals are recorded. The presented results reveal that during the selenization the cations diffuse to the surface to form large grains on top of the nanoparticle layer and the selenization of the film takes place in two simultaneous reactions: 1) a direct and fast formation of large grained selenides, starting with copper selenide which is subsequently transformed into Cu 2 ZnSnSe 4 ; 2) a slower selenization of the remaining nanoparticles. As a consequence of the initial formation of copper selenides at the surface, the subsequent formation of CZTSe starts under Cu-rich conditions despite an overall Cu-poor composition of the film. The implications of this process path on the film quality is discussed. Additionally, the proposed growth model provides an explanation of the previously observed accumulation of carbon from the nanoparticle precursor beneath the large grained layer.

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Section: Growth Modelmentioning

confidence: 88%

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors

Mainz

Walker

Schmidt

et al. 2013

Phys. Chem. Chem. Phys.

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“…Cu 2 ZnSn(S,Se) 4 (CZTSSe) kesterite material is an excellent candidate to be used as absorber layer for thin-film solar cells. This is because this earth-abundant material presents p-type conductivity, a high absorption coefficient and direct band gap energy from 1.0 to 1.5 eV depending on the anions' ratio [1].…”

Section: Introductionmentioning

confidence: 99%

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Caballero

Cano-Torres

Garcia-Llamas

et al. 2015

Solar Energy Materials and Solar Cells

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El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription On the other hand, it is still necessary to understand the role of the growth parameters to produce kesterite material with the optimum properties for maximum device efficiency. fabricated by a sequential, or two-stage, process: deposition of precursor followed by post-sulfurization/selenization. This is advantageous due to its capability and high throughput. However, it is also desirable to reduce the number of stages during the growth process.

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“…The (αE) 2 spectra show a linear dependence with the photon energy over an appreciable energy range, revealing the existence of direct band gap in CZGSe films (Fig.6). From the extrapolation of (αE) 2 vs E curves to (αE) 2 =0, the value of E g has been estimated. The values are equal to 1.52 and 1.17 eV for the band gaps of CZGSe prepared at the substrate temperature of 300 and 420 K, respectively, showing a decrease of E g when increasing the substrate temperature.…”

Section: Resultsmentioning

confidence: 99%

“…Cu 2 ZnGeSe 4 (CZGSe) quaternary compound is considered to be a potential absorber material for photovoltaic applications [1][2][3][4]. In addition, the material in nanostructured form shows very promising thermoelectric properties with a figure of merit up to 0.55 at 450 °C [5].…”

Section: Introductionmentioning

confidence: 99%

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Preparation and optical characterization of Cu2ZnGeSe4 thin films

et al. 2015

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Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: substrates at a substrate temperature of 300 and 420 K. CZGSe films were characterized by Xray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy and by the method of normal incidence transmittance and reflectance. XRD studies reveal an improved crystallinity of the polycrystalline CZGSe films with tetragonal structure when the substrate temperature was increased. The refraction index and extinction coefficient were extracted from the optical measurements. Spectral dependence of absorption coefficient and the energy band gaps values of CZGSe films were also determined.

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Enhancing the performance of CZTSSe solar cells with Ge alloying

Cited by 192 publications

References 16 publications

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Preparation and optical characterization of Cu2ZnGeSe4 thin films

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