Enhancing the performance of lead-free La2NiMnO6 double perovskite solar cells through SCAPS-1D optimization

Singh, Ashwini; Srivastava, Vaibhava; Agarwal, Surbhi; Lohia, Pooja; Dwivedi, D. K.; Umar, Ahmad; Ibrahim, Ahmed A.; Akbar, Sheikh; Baskoutas, Sotirios; Dakua, Pratap Kumar

doi:10.1007/s12596-023-01527-w

Cited by 7 publications

(1 citation statement)

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“…Furthermore, temperature elevation could prompt changes in material interfaces, such as the semiconductor-electrolyte interface, thereby affecting charge transport and recombination [97]. Generally, the energy band alignment at the ETL/photoactive layer and the photoactive layer/HTL interfaces considerably influences the operational performance of the device [98]. For instance, if the valence band off-set is negative, the recombination at the photoactive layer/HTL interface decreases [11,99].…”

Section: The Band Diagrammentioning

confidence: 99%

Numerical simulation of a novel high performance solid‐state dye‐sensitised solar cell based on N719 dye

Njema,

Kibet,

Rono

et al. 2024

IET Optoelectronics

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Among the emerging photovoltaic technologies, solid‐state dye‐sensitised solar cells (ssDSSCs) have attracted considerable interest due to their cost‐effective production, adjustable characteristics, and potential for lightweight and flexible applications. Nevertheless, achieving efficiencies comparable to established technologies, such as perovskite and silicon‐based solar devices, have proven challenging. Herein, the device structure, Pt/PEDOT: PSS/N719 dye/PC61BM/ITO is investigated theoretically using the solar cell capacitance simulator (SCAPS‐1D). Groundbreaking advancement is introduced in ssDSSC design, achieving remarkable theoretical power conversion efficiency of 20.73%, surpassing the performance reported in traditional dye‐based solar cell technologies. The model ssDSSC demonstrates an exceptional Fill factor of 86.64%, indicating efficient current collection; along with a modest short‐circuit current density (Jsc) of 22.38 mA/cm2 and an impressive open‐circuit voltage (Voc) of 1.0691 V, highlighting efficient light absorption and charge separation. Mott–Schottky capacitance analysis and parasitic resistances (series and shunt) have been thoroughly discussed. Despite the fact that only numerical simulation is involved, the proposed ssDSSCs structure gives insights into the fabrication of a highly efficient solar cell that can be injected into the production workflow in order to advance the photovoltaic technology of the solid‐state DSSC.

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Section: The Band Diagrammentioning

confidence: 99%