Enhancing the power factor of p-type BiSbTe films via deposited with/without Cr seed layer

Yüzüak, Gizem Durak; Çiçek, Mert Miraç; Elerman, Ya.; Yüzüak, E.

doi:10.1016/j.jallcom.2021.161263

Cited by 6 publications

(5 citation statements)

References 81 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The previous works [44,45] on using a Cr interlayer to promote adhesion of (Bi,Sb) 2 Te 3 thin films to the substrate have reported an increase of 4x and 7x in the Seebeck coefficient compared to films without a Cr interlayer. Hence, our results were unexpected, although we note that the improvement in the Seebeck coefficient was reported for Cr interlayers that were 50 nm and 46 nm, respectively, whereas we deposited 15 nm Cr adhesion layers.…”

Section: Alternative Adhesion Layermentioning

confidence: 99%

“…Micromachines 2022, 13, x 10 of 20 adhesion layers. Also, only [45] deposited thin films on Si/SiO2, whereas in [44] the deposition was done on glass substrates. A study [46] comparing the effects of 1 nm and 1 µ m of Cr layer on power generation of (Bi,Sb)2(Te,Se)3 thin films in a lateral heat flow thermoelectric module found that the thin films with a 1 µ m Cr interlayer had Seebeck coefficients between 10 µ V/K and −5 µ V/K.…”

Section: Lift-off Of Thermoelectric Thin Filmsmentioning

confidence: 99%

“…Hence, our results were unexpected, although we note that the improvement in the Seebeck coefficient was reported for Cr interlayers that were 50 nm and 46 nm, respectively, whereas we deposited 15 nm Cr adhesion layers. Also, only [45] deposited thin films on Si/SiO 2, whereas in [44] the deposition was done on glass substrates. A study [46] comparing the effects of 1 nm and 1 µm of Cr layer on power generation of (Bi,Sb) 2 (Te,Se) 3 thin films in a lateral heat flow thermoelectric module found that the thin films with a 1 µm Cr interlayer had Seebeck coefficients between 10 µV/K and −5 µV/K.…”

Section: Alternative Adhesion Layermentioning

confidence: 99%

See 2 more Smart Citations

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Bhatnagar

Vashaee

2022

Micromachines

View full text Add to dashboard Cite

Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board compatible devices conceptualized for operation at low-temperature gradients to generate power for wireless sensor nodes (WSNs), the fundamental units of the Internet-of-Things (IoT). CMOS and MEMS compatible micro-TEGs require thin films that can be integrated into the fabrication flow without compromising their thermoelectric properties. We present results on the thermoelectric properties of (Bi,Sb)2(Se,Te)3 thin films deposited via thermal evaporation of ternary compound pellets on four-inch SiO2 substrates at room temperature. Thin-film compositions and post-deposition annealing parameters are optimized to achieve power factors of 2.75 mW m−1 K−2 and 0.59 mW m−1 K−2 for p-type and n-type thin films. The measurement setup is optimized to characterize the thin-film properties accurately. Thin-film adhesion is further tested and optimized on several substrates. Successful lift-off of p-type and n-type thin films is completed on the same wafer to create thermocouple patterns as per the target device design proving compatibility with the standard MEMS fabrication process.

show abstract

Section: Alternative Adhesion Layermentioning

confidence: 99%

Section: Lift-off Of Thermoelectric Thin Filmsmentioning

confidence: 99%

Section: Alternative Adhesion Layermentioning

confidence: 99%

See 1 more Smart Citation

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Bhatnagar

Vashaee

2022

Micromachines

View full text Add to dashboard Cite

show abstract

“…The growth of (Bi 1−x Sb x ) 2 Te 3 has been reported using different techniques such as molecular beam epitaxy (MBE) [ 6 ], electron beam evaporation [ 7 ], sputtering [ 8 ], electrodeposition [ 9 ], pulsed laser deposition [ 10 ], and others. Among these deposition techniques, MBE stands out for the precise control it offers over various growth parameters, allowing to grow thin films with a specific stoichiometry and thickness.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

et al. 2023

View full text Add to dashboard Cite

The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)2Te3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.

show abstract

“…All investigations that have succeeded in increasing the performance coefficient above this amount have employed nano-structured material engineering [3]. Many novel techniques, such alloying nano systems [4], nano wires [5], and thin-film layered structures [6], have been introduced to increase material yield, and there have been extensive investigations into the progress of the thermoelectric effect and, by extension, thermoelectric materials. When Li et al [7] exhibited a picture of the combined electrical structure and phonon mismatch in a single Sn-Se crystal system, they provided novel insight into how to attain low thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Reclaim of Wrecked Bi-Te Based Materials In Peltier Modules In Thermopower Properties By Mechanical Milling

Mehmet

Yüzüak

2023

Cumhuriyet Science Journal

View full text Add to dashboard Cite

We thoroughly evaluated the effects of various treatments on the structural and electrical properties of the two as-cast materials, “Sb-doping Bi-Te (p-type)” and “Se-doping Bi-Te (n-type)” which are frequently present in abandoned Peltier modules. To investigate the thermoelectric properties of Bi2Te3-based materials, waste alloys characterized by electrical conductivity using the hot-end method. Alloys were purified by performing arc melting on a water-cooled copper crucible in a vacuum of at least 10-3 mbar, with five times melting sessions to assure homogeneity. A single and long milling period of 144 hours is applied. After the compressing operation, the resulting discs with nanostructures were annealed for an hour at 600 K under vacuum conditions. The discs' structural properties were characterized using X-ray diffraction (XRD) and their surfaces and stoichiometries were determined using scanning electron microscopy with an energy dispersive feature. The Seebeck coefficient of the nanoparticle formed n-type Bi-Te based sample is -35.3 µV.K-1 and p-type Bi-Te based sample is 100 µV.K-1 (15% of mean error margin). It was found that a notable improvement was attained in comparison to the initial state with the addition of nanoparticles.We thoroughly evaluated the effects of various treatments on the structural and electrical properties of the two as-cast materials, “Sb-doping Bi-Te (p-type)” and “Se-doping Bi-Te (n-type)”, which are frequently present in abandoned Peltier modules. To investigate the thermoelectric properties of Bi2Te3-based materials, waste alloys were produced and separated by electrical conductivity using the hot-end method. The alloys were purified by performing arc melting on a water-cooled copper crucible in a vacuum of at least 10-3 mbar, with 5 times melting sessions to assure homogeneity. A ball-milled procedure was used to reduce the obtained mass-scale materials to nano sizes. Single and long milling period of 144 hours is applied. After the compressing operation, the resulting discs with nano-structures were annealed for an hour at 600 K in a vacuum. X-ray diffraction was used to characterize the discs' structures, while scanning electron microscopy and energy dispersive X-ray spectroscopy were used to examine the discs' surfaces and determine their morphologies. Based on thermal imaging camera scans and Si-diode, we know that the Seebeck coefficient of the nanoparticle formed n-type Bi-Te based sample is -35.37 V.K-1, while that of the nanoparticle formed p-type Bi-Te based sample is 100.05 V.K-1 (15% of mean error margin). It was found that a notable improvement was attained in comparison to the initial state with the addition of nanoparticles.

show abstract

Enhancing the power factor of p-type BiSbTe films via deposited with/without Cr seed layer

Cited by 6 publications

References 81 publications

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Development of MEMS Process Compatible (Bi,Sb)2(Se,Te)3-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators

Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing

Reclaim of Wrecked Bi-Te Based Materials In Peltier Modules In Thermopower Properties By Mechanical Milling

Contact Info

Product

Resources

About