2023
DOI: 10.1016/j.ceramint.2022.11.216
|View full text |Cite
|
Sign up to set email alerts
|

Enhancing the thermoelectric power factor of nanostructured SnO2 via Bi substitution

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 8 publications
(1 citation statement)
references
References 32 publications
0
1
0
Order By: Relevance
“…Tin oxide (SnO 2 ) is an n-type semiconductor characterized by a wide band gap (∼3.6 eV) and electron mobility of 160 cm 2 V −1 s −1 at room temperature (RT) as a result of Sn interstitial defects and oxygen vacancies [9][10][11]. The incorporation of 3d transition metal (M) into SnO 2 to form M/SnO 2 composites is commonly utilized to reduce their particle size and hence enhance their physical and chemical properties [12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Tin oxide (SnO 2 ) is an n-type semiconductor characterized by a wide band gap (∼3.6 eV) and electron mobility of 160 cm 2 V −1 s −1 at room temperature (RT) as a result of Sn interstitial defects and oxygen vacancies [9][10][11]. The incorporation of 3d transition metal (M) into SnO 2 to form M/SnO 2 composites is commonly utilized to reduce their particle size and hence enhance their physical and chemical properties [12][13][14].…”
Section: Introductionmentioning
confidence: 99%