2018
DOI: 10.1016/j.mssp.2018.08.020
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Enhancing thermoelectric properties of p-type SiGe alloy through optimization of carrier concentration and processing parameters

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Cited by 22 publications
(21 citation statements)
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“…Materials with an ideal ratio of Si 80 Ge 20 have been found and widely studied. In SiGe alloys, the large difference in the mean free path between electron (approximately 5 nm) and phonon (approximately 200–300 nm) contributions leads to a strong influence of nanostructuring in a range of 10–100 nm, which reduces the thermal conductivity without significantly reducing the electrical conductivity [ 182 ]. Therefore, nanostructuring [ 183 , 184 , 185 ] and the use of nanoinclusions [ 184 , 186 , 187 , 188 , 189 ] are common strategies to further improve the thermoelectric properties of SiGe alloys.…”
Section: Metals and Intermetallicsmentioning
confidence: 99%
See 1 more Smart Citation
“…Materials with an ideal ratio of Si 80 Ge 20 have been found and widely studied. In SiGe alloys, the large difference in the mean free path between electron (approximately 5 nm) and phonon (approximately 200–300 nm) contributions leads to a strong influence of nanostructuring in a range of 10–100 nm, which reduces the thermal conductivity without significantly reducing the electrical conductivity [ 182 ]. Therefore, nanostructuring [ 183 , 184 , 185 ] and the use of nanoinclusions [ 184 , 186 , 187 , 188 , 189 ] are common strategies to further improve the thermoelectric properties of SiGe alloys.…”
Section: Metals and Intermetallicsmentioning
confidence: 99%
“…Therefore, nanostructuring [ 183 , 184 , 185 ] and the use of nanoinclusions [ 184 , 186 , 187 , 188 , 189 ] are common strategies to further improve the thermoelectric properties of SiGe alloys. For preparation of SiGe alloys, solid-state ball milling [ 180 , 183 , 186 , 187 , 190 , 191 , 192 , 193 , 194 ] or melt spinning (MS) [ 182 , 189 ] in combination with subsequent SPS are commonly used. Bathula et al [ 192 ] reported a peak zT of 1.72 with a power factor of 28.7 W cm −1 K −2 for n -doped Si 80 Ge 20 with SiC nanoinclusions.…”
Section: Metals and Intermetallicsmentioning
confidence: 99%
“…High performance SiGe alloys depicting (A) its reduced κ t and (B) enhanced ZT via miscellaneous optimization techniques at different temperature range …”
Section: High Performance Inorganic Te Materialsmentioning
confidence: 99%
“…Furthermore, the large operating temperature difference has its own contribution, but ultimately it is all about the material's ability to convert heat and generate usefule lectric power. Recently, many new classes of materials,s uch as metal sulfides, [10] selenides, [11] half-Heusler compounds, [12] filled skutterudites, [13] clathrates, [14] oxides, [15] organic or polymer materials, [16] Zintl compounds, [17] and carbon-based compounds, [18] have been introduced with promising properties that give new hopes for the future of thermoelectric technology.F urthermore, strategies such as doping, [19] nanostructuring, [20] alloying, [21] resonant level filling, [22] and band engineering [23] have also been successful in improving the ZT value of the materials. [9] They were preferred for such applications even thought he conversion efficiency was very low because of to their ability to reliably generate poweri nr emote areas without any need for complex technology.D uring 21st century,b etter thermoelectric materials have been developed that are able to expand application of such devices.…”
Section: Thermoelectric Generatorsmentioning
confidence: 99%
“…[9] Earlier,o nly af ew wellknown thermoelectric materials were being used for making thermoelectric generators, which limited their use. Recently, many new classes of materials,s uch as metal sulfides, [10] selenides, [11] half-Heusler compounds, [12] filled skutterudites, [13] clathrates, [14] oxides, [15] organic or polymer materials, [16] Zintl compounds, [17] and carbon-based compounds, [18] have been introduced with promising properties that give new hopes for the future of thermoelectric technology.F urthermore, strategies such as doping, [19] nanostructuring, [20] alloying, [21] resonant level filling, [22] and band engineering [23] have also been successful in improving the ZT value of the materials. For example,m any studies have shown clear improvements in the ZT values of bulk materials by just bringing them to nanostructured dimensions.…”
Section: Thermoelectric Generatorsmentioning
confidence: 99%