Enriched optoelectronic properties of cobalt-doped ZnO thin films for photodetector applications

Vinoth, S.; Arulanantham, A. M. S.; Saravanakumar, S.; Isaac, R. S. Rimal; Soundaram, N.; Chidhambaram, N.; Alagarasan, D.; Varadharajaperumal, S.; Shkir, Mohd.; AlFaify, S.

doi:10.1007/s10854-021-07077-w

Cited by 14 publications

(4 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An additional study corroborated our methodology, suggesting that there is a positive correlation between the concentration of cobalt in ZnO and the absorption of UV rays [27,28]. In contrast, our inquiry was concentrated on the doping of ZnO with 3% cobalt, which is consistent with a recent study by S. Vinoth et al [29] demonstrating the tendency for 3% cobalt to increase UV-ray absorption. As a result, a commercial sunscreen sample was incorporated with both pure ZnO and 3% cobalt-doped ZnO in order to evaluate variations in its optical properties when exposed to UV light for various durations and temperatures.…”

Section: Introductionsupporting

confidence: 92%

Incorporation of zinc oxide and cobalt doped zinc oxide nano-rods in commercial sunscreen sample to optimize its UV-ray absorption

Ansari,

Riaz,

Gull

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

In the last two decades, the ozone layer in the atmosphere has beendepleted, and the sun rays are now more harmful to human skin becausethey no longer filters it completely. Long-term exposure to harmfulultraviolet rays (UV-rays), which have wavelengths between 220nm and380nm, causes catastrophic damage to skin cells. Sunscreens aretherefore absolutely necessary to protect the skin. The co-precipitationmethod was used to synthesize both pure and cobalt-doped zinc oxidenano structures. In sunscreens, these nanostructures serve as a UV filter.The obtained nano structures have been characterized by X-raydiffraction (XRD), scanning electron microscopy (SEM), and diffusereflectance spectroscopy (DRS). The ability of a sunscreen samplecontaining nano structures to yield results for a period of various hours a tdifferent temperatures (20°C, 30°C, and 50°C) has been tested.According to XRD results, prepared samples exhibits hexagonal wurtzitecrystalline structures and are of 22nm in size for pure zinc oxide and 20nmin size for cobalt-doped zinc oxide. SEM was used to find morphologies,i.e., nano rods (NRs) at 200nm and 2µm. DRS provided evidence ofsunscreen's endurance, with a 97% absorption of UV-rays at 50°C for upto 6 hours when incorporated with NRs. In order to boost UV-rayabsorption in sunscreen, nanotechnology has been successfully applied.

show abstract

Section: Introductionsupporting

confidence: 92%

Incorporation of zinc oxide and cobalt doped zinc oxide nano-rods in commercial sunscreen sample to optimize its UV-ray absorption

Ansari,

Riaz,

Gull

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…This could be because of the variation in the crystallite size of the samples as confirmed by our XRD results. The band gap values of the prepared thin films were calculated using the Tauc plot [31].…”

Section: Uv-vis Analysismentioning

confidence: 99%

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Alkallas,

Ben Gouider Trabelsi,

Shkir

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

In the present work, undoped In2S3 and varying concentrations of Tb (1, 2, 3, 4 & 5 wt%) doped In2S3 thin films were synthesized using the economical and nebulizer spray pyrolysis technique for studying their photosensing characteristics at room temperature. X-ray diffractometer (XRD) studies showed the diffraction pattern of the thin films exhibits a cubic- β phase of In2S3 and the highest crystallite size of 61 nm was observed for the In2S3: Tb (2wt%) thin film. The morphological & elemental analysis showed that all the synthesized thin films exhibit homogeneous non-uniform crystal morphology with the existence of S, In, Tb compounds with their distinct composition. From Ultraviolet-Visible(UV–vis) studies, all the prepared thin films exhibit maximum absorption in the UV region with a minimum bandgap of 2.85 eV for the In2S3:Tb (2wt%) thin film. Also, the Photoluminescence (PL) spectra showed that the In2S3:Tb (2wt%) thin film possesses two large intense emission peaks around ∼470 nm (Yellow) and 530 nm (green). Finally, the photo sensing studies showed that the fabricated In2S3:Tb (2wt%) thin film photodetector showed better photocurrent, Responsivity (R), Detectivity (D*), External Quantum Efficiency (EQE), Response/Recovery time values of ∼12.5 μA, 0.296 AW−1, 7.75 × 1010 Jones, 60%, 2.9/3.6 s, respectively indicating the device better suitable for commercial photodetector application.

show abstract

“…Transition metals (TMs) have high density, good conductivity and high melting-boiling temperatures [22][23][24][25]. Among these, Cobalt is preferred in studies due to its good effects on magnetic, hardness and electrical resistance [26,27]. CuO is an exciting semiconducting material with interesting structural and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Solution‐based fabrication of copper oxide thin film influence of cobalt doping on structural, morphological, electrical, and optical properties

ÇETİNKAYA

2024

Turkish Journal of Engineering

View full text Add to dashboard Cite

In this study, Cobalt (Co) doped Copper Oxide (CuO) films at different concentrations were deposited on glass substrates, using the Chemical Bath Deposition method. The films were characterized by Field Emission Scanning Electron Microscopy (FESEM), X-Ray Diffraction XRD), Ultra Violet-Visible Spectroscopy (UV-Vis.) and two-point contact method. The SEM showed that nanoplates formed increased in size and voids on the films surface decreased with increasing Co concentration. The XRD patterns revealed an increase in crystallite size with increasing (from 14.40 to 18.60 nm) Co concentration and no secondary phase was formed. The EDS spectra showed the presence of Co in the film composition with increasing concentration. The results of UV-Vis. spectroscopy showed that transmittance and band gap values could be changed with Co doping and thus the CuO band gap could be adjusted with the Co doping. The temperature-dependent current-voltage measurement results obtained with the two-point contact method showed that activation energy levels increased (from 0.134 to 0.232 eV) with increasing Co concentration. It was also observed that the conductivity increased with increasing temperature.

show abstract

Enriched optoelectronic properties of cobalt-doped ZnO thin films for photodetector applications

Cited by 14 publications

References 52 publications

Incorporation of zinc oxide and cobalt doped zinc oxide nano-rods in commercial sunscreen sample to optimize its UV-ray absorption

Incorporation of zinc oxide and cobalt doped zinc oxide nano-rods in commercial sunscreen sample to optimize its UV-ray absorption

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Solution‐based fabrication of copper oxide thin film influence of cobalt doping on structural, morphological, electrical, and optical properties

Contact Info

Product

Resources

About

Enriched optoelectronic properties of cobalt-doped ZnO thin films for photodetector applications

Cited by 14 publications

References 52 publications

Incorporation of zinc oxide and cobalt doped zinc oxide nano-rods in commercial sunscreen sample to optimize its UV-ray absorption

Incorporation of zinc oxide and cobalt doped zinc oxide nano-rods in commercial sunscreen sample to optimize its UV-ray absorption

Improved photo sensing behavior of the terbium doped In2S3 thin films synthesized by spray pyrolysis technique

Solution‐based fabrication of copper oxide thin film influence of cobalt doping on structural, morphological, electrical, and optical properties

Contact Info

Product

Resources

About

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique