2022
DOI: 10.1039/d1nr06635h
|View full text |Cite
|
Sign up to set email alerts
|

Enrichment of high-purity large-diameter semiconducting single-walled carbon nanotubes

Abstract: Semiconducting single-walled carbon nanotubes SWCNTs (s-SWCNTs) are considered as one of the most promising alternates to traditional silicon-based semiconductors. In particular, large-diameter s-SWCNTs (>1.2 nm) exhibit more advantages over small-diameter...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
4
0

Year Published

2022
2022
2025
2025

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 9 publications
(4 citation statements)
references
References 96 publications
0
4
0
Order By: Relevance
“…Due to the excellent strength (∼100 GPa), large elastic modulus (∼1 TPa), and high conductivity (2 × 10 7 S m −1 ) of CNTs, the macro-scale CNT assemblies of a CNT yarn attracts tremendous attention, such as in wearable electronic textiles, [1][2][3] advanced materials, 4 energy storage, 5,6 nanotechnology. 7,8 In the past, various promising post-treatment methods have been used to improve the mechanical and electrical properties of CNT yarn. The tensile strength and electrical conductivity of CNTY are over 3 GPa and 10 5 S cm −1 , respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Due to the excellent strength (∼100 GPa), large elastic modulus (∼1 TPa), and high conductivity (2 × 10 7 S m −1 ) of CNTs, the macro-scale CNT assemblies of a CNT yarn attracts tremendous attention, such as in wearable electronic textiles, [1][2][3] advanced materials, 4 energy storage, 5,6 nanotechnology. 7,8 In the past, various promising post-treatment methods have been used to improve the mechanical and electrical properties of CNT yarn. The tensile strength and electrical conductivity of CNTY are over 3 GPa and 10 5 S cm −1 , respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, purification becomes a significant issue in FET fabrication. Generally, s-SWNTs isolation can be classified into three approaches: 1) density gradient ultracentrifugation; [18,19] 2) size-exclusion chromatography; [20] and 3) noncovalent selective sorting of s-SWNTs with CPs. [21][22][23][24] The last of these methods, which often employs polyphenylenevinylene-, [21] polyfluorene-, [22] and poly(3-alkylthiophene)-based polymers, [23,24] is particularly esteemed for its exceptional efficiency in dispersion, selectivity, and cost-effectiveness.…”
Section: Introductionmentioning
confidence: 99%
“…They have the possibility of significantly lowering operation voltages and can be integrated into mass-produced printed and flexible electronics. [33][34][35][36] Semiconducting SWCNTs can be purified using conjugated polymers and suspended in nonpolar solvents such as toluene to be used as a semiconducting ink in printed electronics. 37,38 The SWCNT dielectric interface can strongly influence the charge mobility of the TFTs through ionic doping, or polar groups, like hydroxy groups, that can lead to charge trapping and leakage currents in the device.…”
Section: Introductionmentioning
confidence: 99%