Entanglement control and magic angles for acceptor qubits in Si

Abadillo-Uriel, J. C.; Salfi, Joe; Hu, Xuedong; Rogge, Sven; Calderón, M. J.; Culcer, Dimitrie

doi:10.1063/1.5036521

Cited by 15 publications

(21 citation statements)

References 57 publications

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“…To find general material parameters (e. g. π νν , d νν ), we need an accurate description of the Bloch amplitudes, u ν (r) [see Eqs. (7) and (11)]. These parameters have been calculated for GaAs using various techniques, including tight-binding methods [14] and density functional theory (DFT) with empirical pseudopotentials [15,16] (or a combination of both, where the tight-binding parameters are calculated within DFT [17]).…”

Section: First-principles Materials Parameters For Gaasmentioning

confidence: 99%

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Pseudospin-electric coupling for holes beyond the envelope-function approximation

et al. 2020

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In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local (k-independent) coupling of band (internal, pseudospin) degrees of freedom. Such a coupling exists between heavy-hole and light-hole (pseudo-)spin states for holes in III-V semiconductors, such as GaAs, or in group IV semiconductors (germanium, silicon, ...) with broken inversion symmetry. Here, we calculate the electric-dipole (pseudospin-electric) coupling for holes in GaAs from first principles. We find a transition dipole of 0.5 debye, a significant fraction of that for the hydrogen-atom 1s → 2p transition. In addition, we derive the Dresselhaus spin-orbit coupling that is generated by this transition dipole for heavy holes in a triangular quantum well. A quantitative microscopic description of this pseudospinelectric coupling may be important for understanding the origin of spin splitting in quantum wells, spin coherence/relaxation (T * 2 /T1) times, spin-electric coupling for cavity-QED, electric-dipole spin resonance, and spin non-conserving tunneling in double quantum dot systems.

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Section: First-principles Materials Parameters For Gaasmentioning

confidence: 99%

“…heavy-hole and light-hole states (which transform like the Γ 8 representation of T d ) [5]. The interband coupling influences the spectrum of acceptors in silicon in the presence of an electric field [6] and could allow for better control of acceptor spin qubits in silicon [7].…”

Section: Introductionmentioning

confidence: 99%

Pseudospin-electric coupling for holes beyond the envelope-function approximation

et al. 2020

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“…This problem can be deterrent to the implementation of quantum computing in Si due to the relative lack of control about the exact position of dopants in the bulk. Alternative proposals suggested to overcome this difficulty include hybrid dopant–quantum dot structures [ 12 – 13 ], a charge–spin hybrid qubit [ 14 ], optical manipulation [ 15 ] and dipole coupling with electrons [ 16 ] or holes [ 17 – 18 ].…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

Abadillo-Uriel¹,

Koiller²,

Calderón³

2018

Beilstein J. Nanotechnol.

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Since the proposal in 1998 to build a quantum computer using dopants in silicon as qubits, much progress has been made in the nanofabrication of semiconductors and the control of charge and spins in single dopants. However, an important problem remains unsolved, namely the control over exchange interactions and tunneling between two donors, which presents a peculiar oscillatory behavior as the dopants relative positions vary at the scale of the lattice parameter. Such behavior is due to the valley degeneracy in the conduction band of silicon, and does not occur when the conduction-band edge is at k = 0. We investigate the possibility of circumventing this problem by using two-dimensional (2D) materials as hosts. Dopants in 2D systems are more tightly bound and potentially easier to position and manipulate. Moreover, many of them present the conduction band minimum at k = 0, thus no exchange or tunnel coupling oscillations. Considering the properties of currently available 2D semiconductor materials, we access the feasibility of such a proposal in terms of quantum manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two-qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as, and possibly better, than the currently studied bulk host materials for donor qubits.

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“…These features have led to significant interest in single acceptors in silicon [40][41][42][43][44][45][46], notably finding that with appropriate strain manipulation, long coherence times of ∼10 ms can be achieved [47]. Arrays of such acceptors present possibilities for analog quantum simulation of the extended Fermi-Hubbard model [18], which has motivated several theoretical investigations [48][49][50].…”

Section: Introductionmentioning

confidence: 99%

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1

Campbell,

Baczewski,

Butera

et al. 2021

Preprint

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Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B2H6), boron trichloride (BCl3), and aluminum trichloride in both monomer (AlCl3) and dimer forms (Al2Cl6), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 °C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

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Entanglement control and magic angles for acceptor qubits in Si

Cited by 15 publications

References 57 publications

Pseudospin-electric coupling for holes beyond the envelope-function approximation

Pseudospin-electric coupling for holes beyond the envelope-function approximation

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1

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