Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Liu, Po–Tsun; Chou, Yi Teh; Teng, Li Feng

doi:10.1063/1.3272016

Cited by 215 publications

(148 citation statements)

References 13 publications

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“…Therefore, the electrical properties cannot be controlled easily. In other words, the carriers are generated easily from oxygen vacancies according to the following equation [16]:…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen on the threshold voltage of a-IGZO TFT

Chong¹,

Chun²,

Kim³

et al. 2011

Journal of Electrical Engineering and Technology

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-Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on а-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying O 2 ratios. The device performance is significantly affected by adjusting the O 2 ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

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“…Therefore, the electrical properties cannot be controlled easily. In other words, the carriers are generated easily from oxygen vacancies according to the following equation [16]:…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen on the threshold voltage of a-IGZO TFT

Chong¹,

Chun²,

Kim³

et al. 2011

Journal of Electrical Engineering and Technology

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“…NBS tests might cause a moisture reaction at the back channels of AOS TFTs, which could be described as [25,32,33]:…”

Section: Resultsmentioning

confidence: 99%

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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Abstract:The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µ FE = 15.0 cm 2 ·V −1 ·s −1 , SS = 0.5 V/dec, V TH = 1.5 V, I ON /I OFF = 1.1 × 10 8 ) and stability (V TH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

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“…In particular, TFTs based on oxide semiconductors have provided impressive progress in fl at panel displays (FPDs) and fl exible electronics, thanks to their relatively large mobility (>10 cm 2 V −1 s −1 ), high on/off ratio, and transmission advantage. [3][4][5][6][7][8][9][10] While the oxide TFTs have received attention as a promising switching device, it is still challenging to exploit p-type oxide TFTs in low power integrated circuits in comparison to their n-type counterparts. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] This stems from their unacceptably poor mobility and high leakage current (low on/ off current ratio), which pose critical obstacles in their practical use in low power electronics.…”

mentioning

confidence: 99%

High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

Song

Ahn

Kim

et al. 2014

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A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

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Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

Cited by 215 publications

References 13 publications

Effect of oxygen on the threshold voltage of a-IGZO TFT

Effect of oxygen on the threshold voltage of a-IGZO TFT

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

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