Environment-Induced Effects on the Temperature Dependence of Raman Spectra of Single-Layer Graphene

Abdula, Daner; Ozel, Taner; Kang, Kyung‐Hwa; Cahill, David G.; Shim, Moonsub

doi:10.1021/jp809501e

Cited by 51 publications

(68 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The doping effect can be confirmed not only the frequency shifts, but also the full width at half maximum (FWHM) as well as the area and intensity ratios of G and 2D peaks in temperature-dependent Raman scattering of graphene, which are shown in Figure 3. These changes of FWHMs are very similar to the investigations by Abdula et al [35], which help us to conclude that oxygen doping effect probably exists in our temperature-dependent Raman scattering.…”

Section: Oxygen Doping and Temperature Effects Of Raman Spectroscopy supporting

confidence: 91%

Studies on the properties of surface and edges of N-layer graphenes

Chen

Zhou

Qiu

et al. 2011

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

Graphene, a new two-dimensional carbon material, is a rising star of physics, chemistry and materials science. In this work, we report the recent experimental researches on the Raman spectra and the temperature-dependent features of graphenes and carbon nanoscrolls, which are evolved from graphene and have an open tubular structure. The layer-dependent Raman enhancing characteristics of n-layer graphenes for crystal violet, and the thickness-dependent morphologies of gold on n-layer graphenes are also systematically investigated. Meanwhile, the aggregations of ferromagnetic and paramagnetic atoms at edges of graphenes and graphite are observed and the mechanisms are discussed. N-layer graphene, Raman spectroscopy, edge ferromagnetism

show abstract

Section: Oxygen Doping and Temperature Effects Of Raman Spectroscopy supporting

confidence: 91%

Studies on the properties of surface and edges of N-layer graphenes

Chen

Zhou

Qiu

et al. 2011

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

show abstract

“…In addition to compression, doping effects can also cause the G and 2D bands upshifts. [9,10,29], however the temperature coefficient reported from the previous works are not consistent with each other and span a wide range from − 0.016 cm -1 /K to − 0.035 cm -1 /K for the G band frequency. If we use our initial "heating" data in Figure 2(a) of the manuscript, we obtain comparable values to those in the literature, − 0.034 cm -1 /K.…”

mentioning

confidence: 68%

Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene

et al. 2012

View full text Add to dashboard Cite

By thermally cycling single layer graphene in air, we observe irreversible upshifts of the Raman G and 2D bands of 24 cm -1 and 23 cm -1 , respectively. These upshifts are attributed to an in-plane compression of the graphene induced by the mismatch of thermal expansion coefficients between the graphene and the underlying Si/SiO 2 substrate, as well as doping effects from the trapped surface charge in the underlying substrate. Since the G and the 2D band frequencies have different responses to doping, we can separate the effects of compression and doping associated with thermal cycling.By performing the thermal cycling in an argon gas environment and by comparing suspended and on-substrate regions of the graphene, we can separate the effects of gas doping and doping from the underlying substrate. Variations in the ratio of the 2D to G band Raman intensities provide an independent measure of the doping in graphene that occurs during thermal cycling. During subsequent thermal cycles, both the G and 2Dbands downshift linearly with increasing temperature, and then upshift reversibly to their original frequencies after cooling. This indicates that no further compression or doping is 2 induced after the first thermal cycle. The observation of ripple formation in suspended graphene after thermal cycling confirms the induction of in-plane compression. The amplitude and wavelength of these ripples remain unchanged after subsequent thermal cycling, corroborating that no further compression is induced after the first thermal cycle. 3In the study of graphene, Raman spectroscopy is used widely for identifying the thickness, carrier concentration, temperature, and strain [1][2][3][4]. The sensitivity of the Raman G and 2D bands to both anharmonic coupling of phonon modes and carboncarbon length make Raman spectroscopy a useful tool for studying the temperature and strain dependence of graphene [5][6][7][8] that the effects of strain and doping cannot be neglected when calibrating the temperature coefficient of the Raman modes of graphene. In this work, we measure the Raman spectra of both suspended and supported graphene before, during, and after thermal cycling from 300K to 700K. Both the Raman G and 2D bands are studied systematically. Atomic force microscopy (AFM) is used to determine the suspended graphene profile variation before and after thermal cycling. Thermal cycling in air and Ar gas environments enables us to indentify changes associated with gas doping. In doing so, we are able to separate the effects of doping, compression, and temperature in graphene through the interpretation of the resulting Raman spectra.In this work, graphene flakes are deposited on Si/SiO 2 substrates using mechanical exfoliation [22,23]. The number of graphene layers are identified using This G band upshift is consistent with our previous work on suspended graphene, which showed a 25 cm -1 upshift in the supported region, while the suspended region remained constant after thermal cycling [30]. In this previous work, ripple formati...

show abstract

“…A similar behavior was reported previously. 7,12,21 This behavior with hysteresis in the first cycle but not in subsequent ones is reproduced in all experiments performed. Figure 3 shows the Raman spectra during the second heating/cooling cycle for a turbostratic (a, b), and Bernal stacked (c, d) 2-LG, as can be seen from the 2D band shape.…”

mentioning

confidence: 76%

Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study

Ek-Weis

Costa

Frank

et al. 2014

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

One of the greatest issues of nanoelectronics today is how to control the heating of the components. Graphene is a promising material in this area, and it is essential to study its thermal properties. Here, the effect of heating a bilayer structure was investigated using in situ Raman spectroscopy. In order to observe the effects on each individual layer, an isotopically labeled bilayer graphene was synthesized where the two layers were composed of different carbon isotopes. Therefore, the frequency of the phonons in the Raman spectra was shifted in relation to each other. This technique was used to investigate the influence of different stacking order. It was found that in bilayer graphene grown by chemical vapor deposition (CVD), the two layers behave very similarly for both Bernal stacking and randomly oriented structures, while for transferred samples, the layers act more independently. This highlights a significant dependence on the sample preparation procedure.

show abstract

Environment-Induced Effects on the Temperature Dependence of Raman Spectra of Single-Layer Graphene

Cited by 51 publications

References 42 publications

Studies on the properties of surface and edges of N-layer graphenes

Studies on the properties of surface and edges of N-layer graphenes

Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene

Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study

Contact Info

Product

Resources

About