Environmental Stress Testing of Electro–Optic Polymer Modulators

Dinu, Raluca; Jin, Duo; Yu, Gui; Chen, Baoquan; Huang, Diyun; Chen, Hui; Barklund, Anna; Miller, Eric; Wei, Cailin; Vemagiri, J.

doi:10.1109/jlt.2009.2014178

Cited by 46 publications

(36 citation statements)

References 21 publications

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“…20 The fiber-to-fiber insertion loss of the device was (2162) dB, 10 dB of which are attributed to the couplers 21 and 11 dB to the remaining 2.6-mm-long waveguide, which is comprised of tapers, strip-to-slot converters 22 and the strip-load slot waveguide. By comparing the loss of the waveguides on the same chip having different device lengths (cut-back method), we estimate the insertion loss of the 500-mm-long device to be less than 2 dB.…”

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confidence: 99%

100 GHz silicon–organic hybrid modulator

et al. 2014

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Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds. To date, however, only a small number of devices exist that can operate up to this frequency. In this study, we demonstrate that this frequency range can be addressed by nanophotonic, silicon-based modulators. We exploit the ultrafast Pockels effect by using the silicon-organic hybrid (SOH) platform, which combines highly nonlinear organic molecules with silicon waveguides. Until now, the bandwidth of these devices was limited by the losses of the radiofrequency (RF) signal and the RC (resistor-capacitor) time constant of the silicon structure. The RF losses are overcome by using a device as short as 500 mm, and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator. Using this method, we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz. Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these frequencies. Our device has a voltage-length product of only V p L511 V mm, which compares favorably with the best silicon-photonic modulators available today. Using cladding materials with stronger nonlinearities, the voltage-length product is expected to improve by more than an order of magnitude. Keywords: 100GHz; high-speed silicon modulator; nanophotonics; silicon-organic hybrid INTRODUCTION High-bandwidth electro-optic modulators are key components for a variety of applications such as photonic transceivers for long-haul and on-chip communications, 1 radio-over-fiber links, low-noise microwave oscillators 2 and optical frequency comb generation. 3 However, achieving a small footprint, low power consumption, low modulation voltage and high-speed operation 4,5 remains a challenge. Because unstrained silicon does not possess a x (2) -nonlinearity, 6 state-of-the art silicon photonic modulators mainly rely on free-carrier dispersion (a plasma effect) in pin or pn junctions. [7][8][9] Reversed-biased pn junctions are intrinsically faster than forward-biased pin diodes 7 and already enable 50 Gbit s 21 on-off keying with a voltage-length product of V p L528 V mm.10 Unfortunately, such plasma-effect phase modulators produce undesired intensity modulation as well, and they respond nonlinearly to the applied voltage.An alternative approach uses hybrid integration of III-V epitaxy stacks grown on InP substrates, which are subsequently transferred to silicon-on-insulator waveguides to create high-speed electro-absorption modulators.11 Recently, such a device demonstrated a 3-dB bandwidth greater than 67 GHz, representing the fastest modulator realized on a silicon chip to date. Advanced modulation formats such as quadrature amplitude modulation, however, require phase modulators with a linear response and a pure phase modulation, rendering the electro-optic effect (Pockels effect 12 ) partic...

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100 GHz silicon–organic hybrid modulator

et al. 2014

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“…Field-Induced Guiding (FIG) was initially demonstrated in LiNbO 3 and GaAs-based heterostructures [14][15][16][17][18][19]. The advantages of FIG-based design in comparison with traditional designs are temperature and wavelength independence, improved linearity and extremely high bandwidth [20,21].…”

Section: Field-induced Waveguidesmentioning

confidence: 99%

“…Moreover, recently EO polymer modulators were environmental stress tested at both the chip and packaged device level [3]. The study guided by the industry standard Telcordia GR-468 environmental stress specifications with particular attention paid to test regarding thermal and/or photochemical stability demonstrated excellent device performance.…”

Section: Introductionmentioning

confidence: 99%

Guiding Light in Electro-Optic Polymers

Pyayt

2011

Polymers

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Electro-optic polymers have unique photonic, electro-optic and mechanical properties that make them attractive to use in a wide range of devices starting from ultra-high bandwidth light modulators for optical communications to miniature low power components for on-chip optical interconnects. The main building blocks of those devices are optical waveguides, that due to versatility of the polymers can be fabricated as either traditional multi-layer polymer structures, silicon nano-slots filled with the polymer, or dynamically created waveguides based on field-induced guiding. In this paper we cover various types of waveguides and analyze their optimum designs depending on application.

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“…In spite of the demonstration of 100 GHz signal modulation, EO polymer modulator have experienced difficulties to address several reliability issues, which includes the relaxation of poled order, photo-oxidation of chromophore exposed to strong optical field, and drift of the DC bias point in Mach-Zehnder interferometric modulators [3]. Recently, much effort has been devoted to improve the stability of EO polymer materials, and the modulator device have exhibited improved thermal and photostability in a hermatic package [4,5].…”

Section: Introductionmentioning

confidence: 99%

Integrated Photonic Devices Incorporating Low-Loss Fluorinated Polymer Materials

Kim

Chu

et al. 2011

Polymers

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Low-loss polymer materials incorporating fluorinated compounds have been utilized for the investigation of various functional optical devices useful for optical communication and optical sensor systems. Since reliability issues concerning the polymer device have been resolved, polymeric waveguide devices have been gradually adopted for commercial application systems. The two most successfully commercialized polymeric integrated optic devices, variable optical attenuators and digital optical switches, are reviewed in this paper. Utilizing unique properties of optical polymers which are not available in other optical materials, novel polymeric optical devices are proposed including widely tunable external cavity lasers and integrated optical current sensors.

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Environmental Stress Testing of Electro–Optic Polymer Modulators

Cited by 46 publications

References 21 publications

100 GHz silicon–organic hybrid modulator

100 GHz silicon–organic hybrid modulator

Guiding Light in Electro-Optic Polymers

Integrated Photonic Devices Incorporating Low-Loss Fluorinated Polymer Materials

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