Environmentally assisted debonding of copper/barrier interfaces

Birringer, Ryan P.; Shaviv, Roey; Besser, Paul R.; Dauskardt, Reinhold H.

doi:10.1016/j.actamat.2012.01.007

Cited by 32 publications

(22 citation statements)

References 30 publications

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“…We believe that the easy and clean debonding behavior of the metal-SiO 2 interface in water used in the peel-and-stick process is closely related to the environment-assisted subcritical debonding161718192021. The environment-assisted subcritical debonding refers to interfacial fracture that occurs at the debond driving energy (G) well below the critical adhesion energy (G c ), and it results from stress accelerated chemical reactions between environmental species ( e.g.…”

Section: Resultsmentioning

confidence: 99%

“…, H 2 O molecules) and strained bonds ( e.g. , Si-O-Si) at the crack-tip16. The subcritical debonding behavior has been observed for a wide range of materials such as glasses1718, ceramics22 and polymers23 for several decades and it is usually undesirable and responsible for the failure of a range of thin-film structures.…”

Section: Resultsmentioning

confidence: 99%

“…, Si-O-Si) and the environmental species ( e.g. , H 2 O molecules)1617. Previous studies of the water-assisted subcritical debonding phenomenon on the bulk glass (SiO 2 /SiO 2 interface) suggested that water has a strong polar interaction with the strained Si-O-Si crack-tip bonds, leading to the rupture of the hydrogen bond in water and the formation of surface Si-O-H groups on both sides of the fractured surfaces1719.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

Lee

Kim

Zou

et al. 2013

Sci Rep

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Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

Lee

Kim

Zou

et al. 2013

Sci Rep

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“…The need for the DB to block H 2 O/O 2 in-diffusion is due to the demonstrated ability of low-k a-SiOC:H ILD materials to readily uptake moisture [280][281][282][283][284] and the many deleterious resulting effects that have been reported. Specifically, moisture and O 2 permeation into a metal interconnect structure has been shown to result in a number of effects ranging from increased ILD viscoplasticity, 285 dielectric constants, [286][287][288] and leakage currents [289][290][291] to reduced ILD fracture strength, [292][293][294][295][296] ILD/DB adhesion, 297-299 DB/metal adhesion, 300 TDDB lifetimes, 301,302 and electromigration lifetimes. 303,304 Some of the above reliability issues, such as ILD/DB and DB/metal adhesion and electromigration, have been directly linked to H 2 O/O 2 diffusion through the DB and oxidation of the underlying metal and via/trench barrier.…”

Section: Ecs Journal Of Solid State Science and Technology 4 (1) N30mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…where P is the load at the start of crack propagation, a is the length of the crack, B is the width of the sample, E' is the plain strain modulus, and h is the thickness of the aluminum beam [5]. G c , the critical adhesion energy, is the energy required to delaminate a unit surface area of silicone from the superstrate.…”

Section: Methodsmentioning

confidence: 99%

Degradation of thermally-cured silicone encapsulant under terrestrial UV

Cai

Miller

Tappan

et al. 2016

Solar Energy Materials and Solar Cells

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Concentrator photovoltaic (CPV) modules operate in extreme conditions, including enhanced solar flux, elevated operating temperature, and frequent thermal cycling. Coupled with active environmental species such as oxygen and moisture, the operating conditions pose a unique materials challenge for guaranteeing operational lifetimes of greater than 25 years. Specifically, the coatings and encapsulants used in the optical elements are susceptible to environmental degradation during operation. For example, the interfaces must remain in contact to prevent optical attenuation and thermal runaway. We developed fracture mechanics based metrologies to characterize the adhesion of the silicone encapsulant and its adjacent surfaces, as well as the cohesion of the encapsulant. Further, we studied the effects of weathering on adhesion using an outdoor concentrator operating in excess of 1100 times the AM1.5 direct irradiance and in indoor environmental chambers with broadband ultraviolet (UV) irradiation combined with controlled temperature and humidity. We observed a sharp initial increase in adhesion energy followed by a gradual decrease in adhesion as a result of both outdoor concentrator exposure and indoor UV weathering. We characterized changes in mechanical properties and chemical structures using XPS, FTIR, and DMA to understand the fundamental connection between mechanical strength and the degradation of the silicone encapsulant. We developed physics based models to explain the change in adhesion and to predict operational lifetimes of the materials and their interfaces.

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Environmentally assisted debonding of copper/barrier interfaces

Cited by 32 publications

References 30 publications

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Degradation of thermally-cured silicone encapsulant under terrestrial UV

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