2012
DOI: 10.1117/12.909795
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EO-polymer waveguide based high dynamic range EM wave sensors

Abstract: In this paper, we present the design and experimental demonstration of a high dynamic range electric field sensor based on electro-optic (EO) polymer directional coupler waveguides that offers the strong and ultra-fast EO response of EO polymer. As compared to conventional photonic electric field sensors, our directional coupler waveguide design offers several advantages such as bias-free operation, highly linear measurement response up to 70dB, and a wide electric field detection range from 16.7V/m to 750kV/m… Show more

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Cited by 5 publications
(2 citation statements)
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“…In comparison, in Ref [15] a non-slow-light/non-resonant MZI modulator based on EO polymer refilled silicon slot waveguide has an large interaction length of 1.5mm, but the measured in-device r33 is only 15pm/V. For these EO polymer based devices, the EO polymer needs to be poled under a DC electric field, so that the Pockels effect can be produced from the noncentrosymmetric alignment of the guest chromophores doped in the host amorphous polymers [16][17][18][19][20]. In this EO polymer poling process, the leakage current due to the charge injection through the silicon/polymer interface is known to be detrimental to the poling efficiency [21], especially for narrow slot widths (Sw) < 200 nm.…”
Section: Introductionmentioning
confidence: 99%
“…In comparison, in Ref [15] a non-slow-light/non-resonant MZI modulator based on EO polymer refilled silicon slot waveguide has an large interaction length of 1.5mm, but the measured in-device r33 is only 15pm/V. For these EO polymer based devices, the EO polymer needs to be poled under a DC electric field, so that the Pockels effect can be produced from the noncentrosymmetric alignment of the guest chromophores doped in the host amorphous polymers [16][17][18][19][20]. In this EO polymer poling process, the leakage current due to the charge injection through the silicon/polymer interface is known to be detrimental to the poling efficiency [21], especially for narrow slot widths (Sw) < 200 nm.…”
Section: Introductionmentioning
confidence: 99%
“…In comparison, in Ref [15] a non-slow-light/non-resonant MZI modulator based on EO polymer refilled silicon slot waveguide has an large interaction length of 1.5mm, but the measured in-device r33 is only 15pm/V. For these EO polymer based devices, the EO polymer needs to be poled under a DC electric field, so that the Pockels effect can be produced from the non-centrosymmetric alignment of the guest chromophores doped in the host amorphous polymers [16][17][18][19][20]. In this EO polymer poling process, the leakage current due to the charge injection through the silicon/polymer interface is known to be detrimental to the poling efficiency [21], especially for narrow slot widths (Sw) < 200 nm.…”
Section: Introductionmentioning
confidence: 99%