Epitaxial 0.65PbMg1/3Nb2/3O3–0.35PbTiO3 (PMN–PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

Jiang, Juan; Yoon, Soon‐Gil

doi:10.1016/j.jallcom.2010.11.200

Cited by 13 publications

(5 citation statements)

References 22 publications

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“…That could explain a larger P r is achieved for sample A. The values of P r of the films with well-saturated P-E Loops are close to those previously reported on PMN-PT films in the literatures (11-15 C/cm 2 ) [13,25,26], while they are lower than those of in their bulk counterparts, which suggests very little contribution from the displacement of non-180 • domain when the clamping imposed by the substrates [27]. The other important factor that should be considered is residual stress in the films, it has been well recognized that the remnant polarization of a ferroelectric thin film is a function of stress, and tensile stress leads to a lower remnant polarization confirmed by XRD results as shown in Fig.…”

Section: Resultssupporting

confidence: 89%

Ferroelectric and dielectric properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 thin films on La0.6Sr0.4CoO3 buffered Si substrates

Tang

Zhou

Wang

et al. 2012

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 89%

Ferroelectric and dielectric properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 thin films on La0.6Sr0.4CoO3 buffered Si substrates

Tang

Zhou

Wang

et al. 2012

Journal of Alloys and Compounds

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“…However, PMN-PT films on noble metal electrodes like Pt exhibit significant fatigue after the long bipolar switching pulses used in memory application. To overcome this fatigue problem in PMN-PT, metallic oxide electrodes such as La 0.5 Sr 0.5 CoO 3 (LSCO) [2], SrRuO 3 (SRO) [3], and LaNiO 3 (LNO) [4], replacing the noble metal electrodes like Pt [5], are thought to be one possible solution.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial PMN–PT thin films grown on buffered Si substrates using ceramic and single-crystal targets

Jiang¹,

Jung²,

Yoon³

2011

Journal of Alloys and Compounds

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“…Because of this great degree of lattice mismatch, it is impossible to produce an epitaxial LSCO thin film on YSZ/Si(001) having (001) orientation. To overcome this shortcoming, a double buffer layer of CeO 2 /YSZ/Si(001) has been used widely for epitaxial growth of perovskite oxides such as LSCO, 16),17) La 0.67 (Sr, Ca) 0.33 20) and SrRuO 3 21) because the lattice mismatch between CeO 2 and these perovskite-type compounds is very small. For LSCO, the lattice mismatch between CeO 2 and LSCO is only ¹0.6 %.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of neodymia stabilized zirconia on Si(001) substrate using dynamic aurora PLD

Sreerama

Zayasu

Hamada

et al. 2020

J. Ceram. Soc. Japan

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Based on previously reported studies, yttria stabilized zirconia [Y 0.15 Zr 0.85 O 1.93 (YSZ)] has been used as an epitaxial buffer layer on Si(001) substrates. However, a considerable lattice mismatch exists between the YSZ and Si (¹5.4 %). This work elucidates the reported relationship between the lattice parameter and composition of neodymia stabilized zirconia [(Nd X Zr 1¹X O 2¹X/2) (NdSZ)]. According to the relation, the lattice parameter of NdSZ is the same as that of Si at x = 0.75. Therefore, if the epitaxial growth of NdSZ thin film with x = 0.75 is realized on a Si(001) substrate, then zero lattice mismatch can be expected. The deposition of NdSZ thin film on Si(001) substrate was done by dynamic aurora pulsed laser deposition (PLD). Results show that cube-on-cube epitaxial growth (NdSZ(001)[100]//Si(001)[100]) is realized between x = 0.16 and x = 0.52. The best composition of epitaxial NdSZ thin film is regarded as x = 0.47 from the point of crystallinity, orientation and lattice mismatch (¹1.1 %). When composition x is larger than x = 0.57, the NdSZ thin film orientation becomes (111). Results also show that the lattice parameter of the NdSZ thin film is larger than that of NdSZ bulk. For x = 0.47 thin film, the coexistence of the epitaxial (221) domains is detected in addition to the (001) cube-on-cube domain. The (221) domain is formed due to lattice matching of the oxygen sub-lattice, which has an isosceles triangle shape. We produced cube-on-cube epitaxial NdSZ thin film on Si(001) substrate with a very small lattice mismatch. However, such a small lattice mismatch brings about additional (221) domains that have been reported in the epitaxial growth of CoSi 2 thin film on Si(001) substrate. The lattice mismatch between CoSi 2 and Si is ¹1.2 %, which is approximately equal to that between NdSZ (x = 0.47) and Si.

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Epitaxial 0.65PbMg1/3Nb2/3O3–0.35PbTiO3 (PMN–PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

Cited by 13 publications

References 22 publications

Ferroelectric and dielectric properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 thin films on La0.6Sr0.4CoO3 buffered Si substrates

Ferroelectric and dielectric properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 thin films on La0.6Sr0.4CoO3 buffered Si substrates

Epitaxial PMN–PT thin films grown on buffered Si substrates using ceramic and single-crystal targets

Epitaxial growth of neodymia stabilized zirconia on Si(001) substrate using dynamic aurora PLD

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