Epitaxial AlN on <i>c</i>-plane sapphire by plasma nitriding

Chen, Yi Chun; Chang, Li

doi:10.7567/1347-4065/ab07a0

Cited by 5 publications

(3 citation statements)

References 48 publications

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“…For subsequent annealing of the as-deposited TiHfN film, the TiHfN/Si sample was placed on a Mo holder and loaded into a microwave plasma system (ASTeX, 2.45 GHz, MA, USA). The annealing process was similar to that used for TiZrN films [24], and for plasma nitridation of sapphire and TiO 2 to obtain epitaxial AlN and TiN, as shown in our previous studies [25][26][27]. The surface of the TiHfN film was first cleaned with pure hydrogen plasma at a microwave power of 300 W and a pressure of 13 mbar for 5 min, followed by plasma annealing with a gas flow rate of 400 sccm (2.5% H 2 /N 2 ), a power of 800 W and a pressure of 90 mbar for 2 h. The temperature of plasma annealing was 1000-1100 • C, as measured by the optical pyrometer.…”

Section: Methodsmentioning

confidence: 99%

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Chiu

Shih

et al. 2023

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Deposition of a heteroepitaxial TiHfN film with a growth rate of about 1 μm/h was successfully achieved on a Si (001) substrate at a temperature above 700 °C by direct current magnetron reactive sputtering of a Ti0.6Hf0.4 (in atomic fraction) target with an Ar/N2 gas mixture. Annealing of the as-deposited TiHfN/Si sample at a temperature above 1000 °C using microwave plasma with H2/N2 gas was performed to further improve the TiHfN film’s quality. X-ray diffraction results show that the heteroepitaxial TiHfN film on Si exhibits a cube-on-cube relationship as {001}TiHfN//{001}Si and <110>TiHfN//<110>Si. X-ray rocking curve measurements show that the full width at half maximum of (200)TiHfN is 1.36° for the as-deposited TiHfN film, while it is significantly reduced to 0.53° after microwave plasma annealing. The surface morphologies of the as-deposited and annealed TiHfN films are smooth, with a surface roughness of around ~2 nm. Cross-sectional scanning/transmission electron microscopy (S/TEM) shows a reduction in defects in the annealed film, and X-ray photoelectron spectroscopy shows that the film composition remains unchanged. Additionally, S/TEM examinations with atomic resolution illustrate domain matching epitaxy (DME) between TiHfN and Si at the interface. The TiHfN films have good electrical conducting properties with resistivities of 40–45 μΩ·cm.

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Section: Methodsmentioning

confidence: 99%

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Chiu

Shih

et al. 2023

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“…According to previous reports, the AlN has two crystalline structures: a cubic structure and a hexagonal structure, and the probability of the cubic structure (c-AlN) formation is higher in plasma nitriding. 12,25) The peaks of Al…”

Section: Effect Of the H 2 Concentration On Aluminum Nitridingmentioning

confidence: 99%

Aluminum surface nitriding by an atmospheric-pressure non-thermal plasma technique

Ma¹,

Sun²,

Zheng³

et al. 2022

Jpn. J. Appl. Phys.

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The application of aluminum is often limited by low hardness, and plasma nitriding can make it have excellent mechanical property. The purpose of this study is to nitride the aluminum surface by non-thermal transferred arc plasma technology. During the plasma nitriding process, the maximum effective value of output current is about 390 mA and the overall temperature of the samples is much lower than the solidus temperature. It is found that the microstructure and mechanical properties of the aluminum surface are improved by adding hydrogen into the nitrogen plasma. Compared with the surface treated by pure N2 plasma, the particle size of aluminum surface treated by N2/H2 plasma is smaller. The surface hardness of aluminum is nearly doubled after being treated in 6.0 vol%H2 + 94.0 vol%N2 atmosphere.

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“…In our recent studies, we have shown that microwave plasma can be effectively applied for nitridation of c-plane and m-sapphires to form epitaxial AlN. In addition, epitaxial TiN can obtain plasma nitridation of rutile TiO 2 [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2

Chiu

Dung

et al. 2021

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Plasma nitridation of an amorphous SiO2 layer on Si (110) substrate can form well-aligned α-Si3N4 crystallites in fibrous morphology. Nitriding is performed at a temperature in the range of 800–1000 °C by using microwave plasma with a gas mixture of N2 and H2. Raman spectroscopy shows the characteristics of an α-Si3N4 phase without other crystalline nitrides. As shown by scanning electron microscopy, the formed α-Si3N4 microfibers on the Si substrate can be in a dense and straight array nearly along with Si <11¯0>, and can have a length over 2 mm with a diameter in the range of 5–10 μm. Structural characterization of scanning transmission electron microscopy in cross section view reveals that the elongated α-Si3N4 crystallites are formed on the surface of the nitrided SiO2/Si (110) substrate without any interlayers between Si3N4 and Si, and the longitudinal direction of α-Si3N4 appears mainly along <112¯0>, which is approximately parallel to Si <11¯0>.

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Epitaxial AlN on c-plane sapphire by plasma nitriding

Cited by 5 publications

References 48 publications

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Aluminum surface nitriding by an atmospheric-pressure non-thermal plasma technique

Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2

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