Epitaxial Au/Fe4N/MgO thin films on GaAs (001) substrates

Abstract

We investigate the growth of Au/FexNy/MgO trilayers on GaAs(001) substrates by plasma-assisted molecular beam epitaxy. The optimization of the growth conditions made it possible to obtain the compound of stoichiometric Fe4N. Microstructural studies show that Fe4N forms 3D islands at the initial stages of growth. As the Fe4N thickness increases, a columnar growth sets in leading to a strong texturing and to the formation of grains having the same crystallographic orientation. The growth is epitaxial with the relationship GaAs (001) [110]//MgO (001) [110]//Fe4N (001) [110]//Au (012) [0–32]. A chemical analysis at the nanoscale reveals that the interfaces are rather sharp with a limited interdiffusion. Magnetic characterizations show that a trilayer containing a 1-nm-thick Fe4N layer is already ferromagnetic. The easy magnetization axis is in-plane independent of the Fe4N layer thickness (from 1 to 6 nm). This study shows the potential to use Fe4N as a spin injector for spin-optoelectronic applications.