Epitaxial Bi9Ti3Fe5O27 thin films: a new type of layer-structure room-temperature multiferroic

Cao, Xun; Liu, Zhiqi; Dedon, Liv R.; Bell, Andrew J.; Esat, Faye; Wang, Yujia; Yu, Pu; Wang, Chuanshou; Jin, Ping

doi:10.1039/c7tc02666h

Cited by 8 publications

(5 citation statements)

References 25 publications

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“…1,2 Single-crystal-type epitaxial films of perovskite oxides represent an essential part of modern research. [3][4][5][6][7][8][9][10][11] Beyond usage in advanced integrated devices and as high-quality crystals for basic investigations, epitaxial films bring a plethora of remarkable novel phenomena that stem from couplings between film with underlying substrate. Elastic coupling is especially important.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

et al. 2021

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

et al. 2021

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“…Their large and highly-anisotropic unit cell, however, renders their epitaxial integration challenging since impurity phases, , crystal twinning, − and stacking defects may form spontaneously during thin-film processing. In light of this, Aurivillius phases have been considered incompatible with nanoscale device architectures up until the recent achievement of high-quality epitaxial films ,− with well-defined and tunable physical properties. Furthermore, sub-unit-cell ferroelectricity , places Aurivillius compounds at the forefront of ferroelectric oxide research.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Design of High-Quality Epitaxial Aurivillius Thin Films

et al. 2021

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Efforts for the integration of ferroelectric materials in nonvolatile, low energy consuming memories have so far been focused on perovskite oxide materials. Their down-scaling for nanodevices is, however, hindered by finite-size effects, and alternative materials offering more robust polar properties are required. Layered ferroelectrics of the Aurivillius phase have since emerged as promising candidates with robust polarization at subunit-cell thicknesses. Their controlled growth in the epitaxial thin film form has unfortunately remained elusive. Here, we demonstrate the stabilization of the coalescent layer-by-layer growth mode of the Bi n+1 Fe n−3 Ti 3 O 3n+3 (BFTO) Aurivillius family homologues. We define the growth conditions for high-quality, single-crystalline thin films exhibiting ferroelectricity from the first half-unit-cell. We demonstrate the process to be effective for several homologous Aurivillius compositions, which highlights its general applicability. Our work thus provides the systematic framework for the integration of high-quality epitaxial layered ferroelectrics into oxide electronics.

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“…Ferromagnetism has been reported in epitaxial Bi9Ti3Fe5O27 (m=8) thin films grown on SrTiO3 substrates. The small compressive strain exerted on the material by the substrate is thought to influence the D-M interactions (109). Further comparative studies on Bi5Ti3Fe0.7Mn0.3O15 and Bi5Ti3Fe0.7Co0.3O15 thin films fabricated with CSD were conducted.…”

Section: * Perovskites and Other Framework Structure Crystalline Materials * P 250mentioning

confidence: 99%

Naturally Layered Aurivillius Phases: Flexible Scaffolds for the Design of Multiferroic Materials

Halpin¹,

Keeney²

2021

Mat & Dev

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The Aurivillius layer-structures, described by the general formula Bi2O2(Am-1BmO3m+1), are naturally 2-dimensionally nanostructured. They are very flexible frameworks for a wide variety of applications, given that different types of cations can beaccommodated both at the A- and B-sites. In this review article, we describe how the Aurivillius phases are a particularly attractive class of oxides for the design of prospective single phase multiferroic systems for multi-state data storage applications, as they offer the potential to include substantial amounts of magnetic cations within a strongly ferroelectric system. The ability to vary m yields differing numbers of symmetrically distinct B-site locations over which the magnetic cations can be distributed and generates driving forces for cation partitioning and magnetic ordering. We discuss how out-of-phase boundary and stacking fault defects can further influence local stoichiometry and the extent of cation partitioning in these intriguing material systems.

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Epitaxial Bi₉Ti₃Fe₅O₂₇ thin films: a new type of layer-structure room-temperature multiferroic

Abstract: In this communication, we report the successful growth of high-quality Aurivillius oxide thin films with m = 8 (where m denotes the number of pseudo-perovskite blocks) using pulsed laser deposition.

Cited by 8 publications

References 25 publications

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

Nanoscale Design of High-Quality Epitaxial Aurivillius Thin Films

Naturally Layered Aurivillius Phases: Flexible Scaffolds for the Design of Multiferroic Materials

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