Epitaxial character of in growth at annealed ZnO/InP(110) interfaces

Abstract

ZnO/InP(110) samples prepared as light emission sources are explored by X‐ray diffraction to characterize structural changes induced by annealing in the range of 450 to 700 °C for 3 min. Metallic indium is created between the ZnO thin film and the InP substrate as a result of annealing. Pole figure measurements reveal that the most densely populated planes In{101} and InP{111} are oriented parallel and a common symmetry plane exists being perpendicular to the above‐mentioned planes and simultaneously parallel to an InP{110} and an In{100} plane. Moreover, the two types of InP{111} interface (In or P) are not found equally good for In Growth.