Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching

Sarkar, Tirthajyoti; Mazumder, Sudip K.

doi:10.1109/ted.2006.890231

Cited by 11 publications

(8 citation statements)

References 34 publications

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“…The most known structures used with this purpose are those based on the GaAs/Al x Ga 1-x As heterostructures that are already considered as the classical ones. They serve for creation of low-threshold lasers capable to operate at room temperature, highly-efficient photodetectors, light emitting diodes, re-switchers, quantum cascade lasers and detectors [1,[5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs

Kondryuk¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double nanoheterostructures GaAs/Al x Ga 1-x As. The heterojunction has been considered as unstrained, the nanosystem is modeled as a rectangular quantum well of a finite depth. Interaction of exciton with optical polarization phonons has been taken into account. Calculated has been the temperature dependence of the energy corresponding to transition into the background excitonic state, and determined have been temperature changes in the absorption coefficient related with this transition. It has been shown that observation of these temperature changes in the energy and absorption coefficient, caused by interaction with optical phonons, is possible in the case of exciton with heavy hole at temperatures above 100 K.

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Section: Introductionmentioning

confidence: 99%

Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs

Kondryuk¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Up to date, there are rather many semiconductor compounds suitable for creation of a new electron, optoelectronic, quantum-optic, and other devices based on the well-known heterojunction Al x Ga 1-x As/GaAs [5][6][7][8] and in-depth studying the low-dimensional nano-systems on its base [9][10][11]. In particular, they ascertained the opportunity to tune the energy spectrum of 2D electrons in quantum wells (QW) GaAs with Al x Ga 1-x As barrier layers.…”

Section: Introductionmentioning

confidence: 99%

Concentration-size dependences for the electron energy in Alx Ga1-xAs/GaAs/AlxGa1-xAs nanofilms

Kondryuk¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostructure with a quantum well based on the double heterojunction Al x Ga 1-x As/GaAs (nanofilm), the authors have calculated the electron energy for a varied thickness of the film. It has been studied the influence of barrier material composition as well as electron-phonon interaction on the electron energy.

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“…A schematic view of the integrated sensor is shown in Figure 1. Compared to the recent state of the art [1]- [5] where large and powerful laser sources are required to transfer both the information signal and its required energy, the proposed integration approach allows for smaller, lighter and low-cost optical sources such as LEDs [9]. This paper describes in detail the experimental approach and the particular setups developed in order to accurately characterize these specific IOD.…”

Section: Introductionmentioning

confidence: 99%

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Vafaei

Crébier

Rouger

2013

2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

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This paper demonstrates an accurate measurement procedure to characterize the DC and AC performance of an optical detector designed for monolithic integration with a 600 V vertical power MOS transistor. The spectral quantum efficiency (QE) from 400 nm up to 1 µm wavelengths has been measured. A QE of 26% in the 450 nm -520 nm wavelength range was achieved. The developed setup and measurement procedures can be used for diced samples, packaged devices, and on-wafer probing (maximum size: 4" wafers); furthermore, it is equipped with temperature control. The integrated optical detectors (IOD) key phenomena have been investigated for a wide range of wavelengths and biasing conditions, both experimentally and numerically. Simulation results as well as experimental results are presented and compared.

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Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching

Cited by 11 publications

References 34 publications

Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs

Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs

Concentration-size dependences for the electron energy in Alx Ga1-xAs/GaAs/AlxGa1-xAs nanofilms

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

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