Epitaxial Electrodeposition of Tin(II) Sulfide Nanodisks on Single-Crystal Au(100)

Abstract

Epitaxial nanodisks of tin(II) sulfide (SnS) are deposited electrochemically on a [100]-oriented singlecrystal Au substrate from an acidic solution at 70 °C. The SnS grows with two different out-of-plane orientations of [100] and [301], which each have four equivalent in-plane orientations. X-ray pole figures reveal the following epitaxial relationships: SnS(100)[010]//Au(100)[010], SnS(100)[010]//Au(100)[01 j 0], SnS(100)[010]//Au(100)[001], SnS(100)[010]//Au(100)[001 j ], SnS(301)[010]//Au(100)[010], SnS(301)[010]// Au(100)[01 j 0], SnS(301)[010]//Au(100)[001], and SnS(301)[010]//Au(100)[001 j ]. For the SnS[100]orientation, the in-plane mismatch is -2.4% in the [010] direction and 6.1% in the [001] direction. For the [301] orientation, the in-plane mismatch is -2.4% in the [010] direction and alternates between 3.4% and 6.7% in the [103 j ] direction. The SnS deposits with a disklike morphology with a diameter of 300 nm and a thickness of 50 nm.

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

“…16 for the XRD peak. 36 Such film qualities are far from what is needed for the development of PVCs with high conversion efficiencies. To date, little work has been done on the effects of the interface states on the conversion efficiency of the device.…”

MBE growth of van der Waals epitaxy using graphene buffer layer

“…15 Rocking curve FWHM of 3.16° was reported by Boonsalee et al 6 on epitaxial growth of SnS by electrodeposition. 13 This is in contrary to the expected high crystallinity of vdWEs and their weak dependencies on the substrate quality. So far, very little work has been done to improve on the crystallinity of SnS.…”

“…It was pointed out that the large conduction band offset at the CdS/SnS heterojunction that results in an energy barrier at the heterojunction and thereby blocking the photogenerated carriers. 12 In addition, the experimental data also indicate low open circuit voltages, V OC , and short circuit current densities, J SC 4,[12][13][14] suggesting that material defects may also have major impact on the efficiencies of the SnS-based PVCs. Small grain size of ~0.092 µm and defect density of ~10 12 cm -2 are typically observed for the as-grown films by co-evaporation technique.…”

Epitaxial Electrodeposition of Chiral Films Using Chiral Precursors

“…In this process, the electrochemically produced species reacts with water or hydroxide ions to form a metal oxide on the electrode. [41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57] A second method to produce thin films is to electrochemically change the pH of the electrolyte at the electrode surface. Because the solubility of any material is dependent on pH, the pH can be electrochemically changed at the electrode surface, thus lowering the solubility of the material and resulting in the precipitation of the material only on the electrode surface.…”