Epitaxial europium oxide on Ni(100) with single-crystal quality

Förster, D.; Klinkhammer, Jürgen; Busse, Carsten; Altendorf, S. G.; Michely, Thomas; Hu, Z.; Chin, Y. Y.; Tjeng, L. H.; Coraux, Johann; Bourgault, D.

doi:10.1103/physrevb.83.045424

Cited by 25 publications

(18 citation statements)

References 64 publications

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“…32 Cross-sectional TEM specimens were prepared using the FEI Strata 400 focused ion beam with final ion milling performed at 2 keV to minimize surface damage as well as mechanical polishing with water-free solvents followed by a low-angle, low-energy ion milling cleaning step. HAADF-STEM Supplemental Figure S2, 30 shows the presence of a chemically abrupt interface without interfacial europium valence changes. This suggests that the approximately twomonolayer dark region observed in Fig.…”

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confidence: 99%

Hetero-epitaxial EuO interfaces studied by analytic electron microscopy

Mundy

Hodash

Melville

et al. 2014

Applied Physics Letters

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With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO|Si and EuO|YAlO 3 interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering. a These authors contributed equally to this work.

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confidence: 99%

Hetero-epitaxial EuO interfaces studied by analytic electron microscopy

Mundy

Hodash

Melville

et al. 2014

Applied Physics Letters

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“…Finally, the possibility to grow thin films of EuO on a conductive substrate makes this material accessible to surface science methods with the goal to study, e.g., the mechanism behind the spectacular metal-insulator transition in electron doped EuO. 7 The use of the nearly defect free, flat, and chemically inert graphene as the substrate can help to simplify the preparation process for single crystalline films on metal substrates, 8 which is complicated by the parallel growth of complex Eu interface oxides. 9 An issue of high relevance for the application of any ferromagnetic ultrathin film is the substantial reduction of T C due to finite size effects.…”

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confidence: 99%

“…An established method for the growth of stoichiometric EuO films is the distillation technique 6,8,18,19 where MBE is carried out at elevated substrate temperatures under Eu excess. The surplus Eu is re-evaporated and the formation of compounds with a lower Eu-content (e.g., Eu 2 O 3 ) is avoided.…”

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Structure and magnetic properties of ultra thin textured EuO films on graphene

Klinkhammer

Förster

Schumacher

et al. 2013

Applied Physics Letters

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We present a straightforward and reproducible method to grow stoichiometric and single phase (100) textured EuO thin films on epitaxial graphene. Depending on coverage, either separated EuO grains or fully closed layers can be prepared. Room temperature preparation followed by annealing in Eu vapor leads to a random distribution of the in-plane orientation, whereas growth under distillation conditions at 720 K induces a fixed orientation with respect to the substrate. Magneto-optical Kerr effect (MOKE) shows that the films are ferromagnetic with an enhanced Curie temperature.

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“…Electrondoped europium monoxide (EuO) is a promising candidate for this purpose, as it undergoes a simultaneous ferromagnetic (FM) and insulator-to-semimetal transition [1], exhibiting an outstanding magneto-electric response, including the strongest colossal magnetoresistance effect known [2,3], magneto-optical effects [4][5][6][7], and a spin polarization of the conduction band of nearly 100 % in the FM state [8,9]. Improved sample fabrication techniques [10,11] and europium monoxide's epitaxial integrability into Si [9] and GaAs [12] structures have renewed and intensified the interest in this material during the past few years.…”

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Theory of Curie temperature enhancement in electron-doped EuO

Stollenwerk

Kroha

2015

Phys. Rev. B

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We present a comparative, theoretical study of the doping dependence of the critical temperature TC of the ferromagnetic insulator-metal transitions in Gd-doped and O-deficient EuO, respectively. The strong TC enhancement in Eu1−xGdxO is due to Kondo-like spin fluctuations on the Gd sites, which are absent in EuO1−x. Moreover, we find that the TC saturation in Eu1−xGdxO for large x is due to a reduced activation of dopant electrons into the conduction band, in agreement with experiments, rather than antiferromagnetic long-range contributions of the RKKY interaction. The results shed light on possibilities for further increasing TC.

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Epitaxial europium oxide on Ni(100) with single-crystal quality

Cited by 25 publications

References 64 publications

Hetero-epitaxial EuO interfaces studied by analytic electron microscopy

Hetero-epitaxial EuO interfaces studied by analytic electron microscopy

Structure and magnetic properties of ultra thin textured EuO films on graphene

Theory of Curie temperature enhancement in electron-doped EuO

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