Epitaxial Fe∕GaAs via electrochemistry

Bao, Zhi Liang; Kavanagh, K. L.

doi:10.1063/1.2014939

Cited by 24 publications

(30 citation statements)

References 23 publications

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“…The (NH 4 ) + ions in the electrolyte are also well known to form complexes with the metal ions, thereby reducing their rate of oxidation. We found similar effect in the epitaxial electrodeposition of Fe films on GaAs [10].…”

Section: Methodssupporting

confidence: 75%

“…Recently, we have been studying the effects of ammonium sulphate [(NH 4 ) 2 SO 4 ] and dilute metal sulphate electrolytes on the epitaxial electrodeposition of metals on GaAs substrates. We have found that additions of (NH 4 ) 2 SO 4 to dilute FeSO 4 solution can greatly improve the quality of epitaxial Fe films grown on GaAs [10]. In this paper, we report the electrodeposition of well-aligned Co nanodiscs on GaAs (1 1 1), (1 1 0), and (0 0 1) substrates from dilute cobalt sulphate and ammonium sulphate solutions.…”

Section: Introductionmentioning

confidence: 94%

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Aligned Co nanodiscs by electrodeposition on GaAs

Bao

Kavanagh

2006

Journal of Crystal Growth

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Section: Methodssupporting

confidence: 75%

Section: Introductionmentioning

confidence: 94%

Aligned Co nanodiscs by electrodeposition on GaAs

Bao

Kavanagh

2006

Journal of Crystal Growth

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“…7,8 Bao et al have obtained an improved Fe film quality using additions of ammonium sulfate in the electrodeposition solution. 9 Although GaAs and AlGaAs are structurally almost identical, the differences in band structure might result in different deposition kinetics and thus have an influence on the crystallographic properties of the grown films.…”

Section: Resultsmentioning

confidence: 99%

Structural and Magnetic Properties of Epitaxial Fe and Ni Thin Films Grown on n-AlGaAs(001) Using Electrodeposition

Vutukuri¹,

Schad²,

Alexander³

et al. 2008

Electrochem. Solid-State Lett.

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We report epitaxial growth of body-centered cubic Fe and face-centered cubic Ni thin films on n-type AlGaAs͑001͒ substrates using electrochemical deposition with the cubic axes of Fe oriented parallel to the substrate lattice while the Ni is rotated in-plane 45°. The magnetic properties in either case are dominated by the fourfold crystalline anisotropy, a high remanence, and saturation magnetization values similar to bulk properties. The growth of such ferromagnetic contacts on AlGaAs might find applications in magneto-electronics.The discovery of spin-dependent transport 1-3 has recently stimulated wide interest in designs for memory and logic devices. In particular, the proposal of a spin-polarized field effect transistor 4 has triggered great attention on the issue of integration of ferromagnetic materials with semiconductors. Devices of this kind would require the growth of epitaxial ferromagnetic films with well-defined crystallographic, magnetic, and interface properties. Electrochemical deposition ͑ECD͒ in this regard offers important advantages as it is a low-energy, room-temperature deposition process which can limit the interdiffusion between the film and the substrate, thus enabling the growth of high-quality epitaxial layers. 5,6 In this article, we report on the electrochemical epitaxial growth of Fe and Ni films from sulfate electrolytes onto n-AlGaAs and on the structural and magnetic properties of the grown films. ExperimentalThe substrates were single-crystalline, n-doped GaAs͑001͒ on which a 200 nm thick Al 0.08 Ga 0.92 As:Si layer was grown by molecular beam epitaxy with 1 ϫ 10 18 cm −3 n-doping. The electrical contact to the substrate used for ECD was made using a Ga-In eutectic on the back side of the substrates. Prior to deposition, the substrates were cleaned in a 10% ammonia solution for 2 min and subsequently rinsed in deionized water prior to deposition. The surface area exposed for deposition typically was about 20 mm 2 .Electrodeposition was carried out under galvanostatic control ͑current density of 2.5 mA/cm 2 for Fe and 3.5 mA/cm 2 for Ni, using 0.1 M sulfate solutions with pH 2.5 in both cases͒ at 25°C in a prismatic cell with vertical parallel electrodes and a calomel reference electrode using a potentiostat EG&G, model 273A. In order to reduce the effect of any resistance variation of the back contact to the substrate, galvanostatic deposition was preferred over potentiostatic control. Graphite was used as the counter electrode. After deposition, the samples were rinsed with deionized water and blow dried. Film thicknesses are 50 nm for Ni and about 90 nm for Fe. These values were estimated from X-ray reflectivity for Ni and from saturation magnetic moments for Fe. Fe films were too rough to allow thickness measurements based on X-ray reflectivity. Hysteresis loops and angular remanence curves were measured using a Digital Measurement Systems vibrating sample magnetometer ͑VSM, DMS model 990͒. In-plane angular ferromagnetic resonance ͑FMR͒ was measured at 25.6 GHz with the dc fi...

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“…Formation of epitaxial Fe contacts to GaAs(001), GaAs (110), and GaAs(111) from a ferrous ammonium sulphate (Fe(NH 4 ) 2 SO 4 ) electrolytic solution by Bao et al 83 , and a comparison between contacts to GaAs(001) using iron chloride (FeCl 2 ) and ferrous ammonium sulphate electrolytes by Svedberg et al 84 , have demonstrated that electrodeposition may also be a useful technique for ferromagnet/semiconductor contact formation. As electrodeposition is a very lowenergy method, the formation of very abrupt interfaces should be possible by this technique 84 56 .…”

Section: Ferromagnet Film Depositionmentioning

confidence: 99%

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

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Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe / GaAs (001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.

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Epitaxial Fe∕GaAs via electrochemistry

Cited by 24 publications

References 23 publications

Aligned Co nanodiscs by electrodeposition on GaAs

Aligned Co nanodiscs by electrodeposition on GaAs

Structural and Magnetic Properties of Epitaxial Fe and Ni Thin Films Grown on n-AlGaAs(001) Using Electrodeposition

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

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