Epitaxial ferromagnetic metal/GaAs(100) heterostructures

Chen, L. C.; Dong, Jing; Schultz, Brian D.; Palmstrøm, C. J.; Berezovsky, Jesse; Isakovic, A. F.; Crowell, P. A.; Tabat, N.

doi:10.1116/1.1306297

Cited by 29 publications

(13 citation statements)

References 29 publications

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“…2a, one observes the superposition of a small four-fold and large two-fold anisotropy, both with the easy axis along [1 À1 0]. The four-fold anisotropy is assumed to arise from the cubic symmetry of the Heusler's (0 0 1) plane, while the uniaxial anisotropy is probably induced by the substrate (0 0 1) surface of the zinc-blende structure [11,12], or by atomic steps from a small miscut of the substrate [8,13]. It should be noted that this data looks quite similar to that observed by Ambrose et al [3] in Co 2 MnGe on GaAs.…”

Section: Article In Pressmentioning

confidence: 99%

Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (001) films

Pechan

Carr

et al. 2005

Journal of Magnetism and Magnetic Materials

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Section: Article In Pressmentioning

confidence: 99%

Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (001) films

Pechan

Carr

et al. 2005

Journal of Magnetism and Magnetic Materials

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“…Details of the growth procedure, which limits interfacial reactions and yields magnetic layers of high crystalline and magnetic quality, have been given elsewhere. [11] A description of the various samples is provided in Table I. Samples A, B, C, and E are Schottky diodes with In x Ga 1-x As (x = 0.11) quantum wells embedded in the depletion region.…”

mentioning

confidence: 99%

“…4 addresses this consideration. Since the in-plane coercivities are on the order of 20 Oe along the easy direction, [11] the magnetization can be switched in fields that are negligible on semiconductor scales. Furthermore, the light enters the cleaved facet of the sample without passing through the ferromagnetic film.…”

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confidence: 99%

Optical pumping in ferromagnet-semiconductor heterostructures: Magneto-optics and spin transport

et al. 2001

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Epitaxial ferromagnetic metal -semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In 1-x Ga x As quantum wells. We have conducted studies as a function of photon energy, bias voltage, magnetic field, and excitation geometry.For optical pumping with circularly polarized light at energies above the band edge of GaAs, photocurrents with spin polarizations on the order of 1 % flow from the semiconductor to the ferromagnet under reverse bias. For optical pumping at normal incidence, this polarization may be enhanced significantly by resonant excitation at the quantum well ground-state. Measurements in a side-pumping geometry, in which the ferromagnet can be saturated in very low magnetic fields, show hysteresis that is also consistent with spin-dependent transport. Magneto-optical effects that influence these measurements are discussed.

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“…However, not only do their magnetic and structural properties change in the thin film regime, but they can also be influenced by the substrate and the deposition method used during growth [5,6]. There have been several reports of high quality CoFe films grown on GaAs(1 0 0) [7][8][9], MgO [10], ZnSe(0 0 1) heterostructures [6,11], and CoFe films grown on the Cu(0 0 1) surface. As with other substrates, Co rich CoFe alloys grown on the Cu(1 0 0) surface exhibit an in-plane easy axis of magnetisation [12,13].…”

Section: Introductionmentioning

confidence: 98%