1998
DOI: 10.1103/physrevb.57.12530
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Epitaxial film growth of the charge-density-wave conductorRb0.30MoO3on

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Cited by 9 publications
(5 citation statements)
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“…Some physical properties can be significantly affected during the horizontal expansion of the islands. For example, tilting of crystallographic orientation has frequently been observed in epitaxial layers [8][9][10], and it was speculated that this tilting resulted from the effects of interfacial tensions. In this Letter we report on an unusual crystallization behavior of NH 4 Cl on a glass substrate.…”
mentioning
confidence: 99%
“…Some physical properties can be significantly affected during the horizontal expansion of the islands. For example, tilting of crystallographic orientation has frequently been observed in epitaxial layers [8][9][10], and it was speculated that this tilting resulted from the effects of interfacial tensions. In this Letter we report on an unusual crystallization behavior of NH 4 Cl on a glass substrate.…”
mentioning
confidence: 99%
“…[805], were fabricated using the pulsed-laser-deposition (PLD) method, which was developed earlier for the epitaxial growth of high T c copper oxides [806]. The stoichiometry and morphology of the deposited thin films was shown [805,807,808] to depend on the thermodynamic conditions during growth (temperature of substrat, nature of substrat, oxygen pressure and deposition rate). The thin films are granular with the largest grains when grown at high T (350 • C < T < 500 • C) and low deposition rate.…”
Section: Mesoscopymentioning
confidence: 99%
“…The majority of grains of µ-length has the chain b-axis parallel to the substrate plane. According to substrates -sapphire (Al 2 O 3 ) or SrTiO 3 -the morphology of films were studied [807,808] using X-ray diffraction (XRD), energy-dispersive analysis of X-rays (EDX), scanning electron microscopy (EM), transmission electron microscopy (TEM), atome-force microscopy (AFM).…”
Section: Mesoscopymentioning
confidence: 99%
“…Based upon previous experience [14][15][16] with the structurally very similar compound Rb 0.3 MoO 3 , oxygen pressure (p O2 ) has been varied between 1 and 10 Pa and the substrate temperature (T S ) between 400 C and 450 C with several attempts at 350 C and 500 C. Depositions for each set of conditions were performed on both (510)SrTiO 3 (STO) and (1-102)Al 2 O 3 (ALO) substrates, which have suitable lattice parameters. 14 The laser pulse parameters have been kept constant at 248 nm wavelength and 25 ns pulse width, with repetition rate of 5 Hz and pulse energy of 250 mJ corresponding to a fluence of 2.4 J/cm 2 .…”
Section: Thin Films Growthmentioning
confidence: 99%
“…Van der Zant et al have successfully applied the pulsed laser deposition (PLD) technique [14][15][16][17][18] to grow films of CDW system Rb 0.3 MoO 3 with thickness of the order of 1 lm. However, for the time-resolved THz conductivity measurements, as well as for FED experiments, the films should be about one order of magnitude thinner.…”
Section: Introductionmentioning
confidence: 99%