Epitaxial garnet films by organometallic chemical vapor deposition

Cowher, M. E.; Sedgwick, T. O.; Landermann, J.

doi:10.1007/bf02655290

Cited by 17 publications

(3 citation statements)

References 13 publications

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“…During the last ten years great emphasis has been attached to the preparation of electronic and magnetic materials such as III-V and II-VI semiconductors and oxides by chemical vapor deposition (CVD) using organometallic compounds and chelates, such as trimethyl and triethyl metal compounds (1-7), alkoxides (8)(9)(10)(11)(12), metal carbonyls (13)(14), and ~diketonates. Among the ~-diketonates, the most frequently used are acetylacetonates (15)(16), trifluoroacetylacetonates (17), and dipivaloylmethane (18).…”

mentioning

confidence: 99%

β Fe2 O 3: Preparation of Thin Films by Chemical Vapor Deposition from Organometallic Chelates and Their Characterization

Ben‐Dor

Fischbein

Felner

et al. 1977

J. Electrochem. Soc.

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Thin films of a new iron oxide phase, β‐Fe2O3 , were prepared by chemical vapor deposition (CVD) from tris(trifluoroacetylacetonato) iron (III) at 300°C in the presence of oxygen onto a variety of substrates. The films were characterized by x‐ray diffraction analysis, scanning electron microscopy, and Mössbauer spectroscopy. For the latter measurements the films were prepared from enriched 57Fe2O3 . The ultraviolet, visible, and infrared spectra of the films were also recorded. The iron (III) oxide phase prepared was bcc having the bixbyite structure, Ia3 space group and the lattice constant a0=9.393Å . There are 16 formula molecules to the unit cell and the two iron atoms occupy two nonequivalent distorted octahedral lattice sites: 3̅ (8b); 2(24d).

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confidence: 99%

β Fe2 O 3: Preparation of Thin Films by Chemical Vapor Deposition from Organometallic Chelates and Their Characterization

Ben‐Dor

Fischbein

Felner

et al. 1977

J. Electrochem. Soc.

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“…Before Curtis et al [42], the lack of an appropriate vapor phase source of lithium prevented the epitaxial growth of LN via CVD. Following the use of 2,2,6,6-tetramethylheptane-3,5-dione (THD) for epitaxial garnet films [41], Curtis et al [42] used the Li(THD) as a Li source and Niobium-pentamethylate [Nb(OMe) 5 ] as a Nb source to attempt the growth of LN films on various substrates. However, epitaxial growth was only seen on LN and LiTaO 3 substrates, and the films were a black color and amorphous.…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

“…Of particular interest are the elimination of rotational domains, as this has been shown to strongly effect optical quality [15,16]. There are various epitaxial methods that have successfully grown LN, including liquid phase epitaxy (LPE) [17][18][19][20][21][22][23][24][25][26], sputtering [12,14,[27][28][29][30][31][32][33][34][35][36][37][38][39][40], chemical vapor deposition (CVD) [41][42][43][44][45][46][47][48][49][50], pulsed laser deposition (PLD) [13,[51][52][53][54][55][56][57][58][59][60]…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of LiNbO3: Historical Challenges and Recent Success

2021

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High-quality epitaxial growth of thin film lithium niobate (LiNbO3) is highly desirable for optical and acoustic device applications. Despite decades of research, current state-of-the-art epitaxial techniques are limited by either the material quality or growth rates needed for practical devices. In this paper, we provide a short summary of the primary challenges of lithium niobate epitaxy followed by a brief historical review of lithium niobate epitaxy for prevalent epitaxial techniques. Available figures of merit for crystalline quality and optical transmission losses are given for each growth method. The highest crystalline quality lithium niobate thin film was recently grown by halide-based molecular beam epitaxy and is comparable to bulk lithium niobate crystals. However, these high-quality crystals are grown at slow rates that limit many practical applications. Given the many challenges that lithium niobate epitaxy imposes and the wide variety of methods that have unsuccessfully attempted to surmount these barriers, new approaches to lithium niobate epitaxy are required to meet the need for simultaneously high crystalline quality and sufficient thickness for devices not currently practical by existing techniques.

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Chemical Vapor Deposition of Metal‐Containing Thin‐Film Materials from Organometallic Compounds

Spencer¹

1994

Progress in Inorganic Chemistry

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Epitaxial garnet films by organometallic chemical vapor deposition

Cited by 17 publications

References 13 publications

β Fe2 O 3: Preparation of Thin Films by Chemical Vapor Deposition from Organometallic Chelates and Their Characterization

β Fe2 O 3: Preparation of Thin Films by Chemical Vapor Deposition from Organometallic Chelates and Their Characterization

Epitaxy of LiNbO3: Historical Challenges and Recent Success

Chemical Vapor Deposition of Metal‐Containing Thin‐Film Materials from Organometallic Compounds

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