Epitaxial Growth

Microscopic Topography of Heterocrystal Interfaces

“…Heteroepitaxial growth of single crystals on single crystal substrates is well established for inorganic materials and has become a mainstay of the electronics industry. [1][2][3][4][5] The epitaxial growth of organic crystals on organic crystal substrates, although less well developed compared with inorganic materials, has emerged as an active subject of research owing to its impact on technology, ranging from new electronic materials to pharmaceuticals. [6][7][8][9] These investigations have included the use of single crystal substrates for controlling nucleation and polymorphism, 10 the growth of heteroepitaxial organic thin films relevant to electronic applications, 11 and elucidation of epitaxy mechanisms, 12 which can be more complex than those of their inorganic counterparts owing to weaker intermolecular bonding and lower crystal symmetry.…”

“…Heteroepitaxial growth of single crystals on single crystal substrates is well established for inorganic materials and has become a mainstay of the electronics industry. − The epitaxial growth of organic crystals on organic crystal substrates, although less well developed compared with inorganic materials, has emerged as an active subject of research owing to its impact on technology, ranging from new electronic materials to pharmaceuticals. − These investigations have included the use of single crystal substrates for controlling nucleation and polymorphism, the growth of heteroepitaxial organic thin films relevant to electronic applications, and elucidation of epitaxy mechanisms, which can be more complex than those of their inorganic counterparts owing to weaker intermolecular bonding and lower crystal symmetry . Epitaxy concepts have been invoked to explain the formation of molecular crystal composites, in which compounds with nearly identical crystal structures but different compositions form “heterocrystals” in which one compound surrounds the other. − One rather comprehensive study has demonstrated that epitaxial growth between phases of isostructural metal complexes occurs more readily for interfaces defined by smaller strain and comparable surface structure.…”