Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Huang, Yong; Ryou, Jae Hyun; Dupuis, R. D.; D'Costa, V. R.; Steenbergen, Elizabeth H.; Fan, Jinchen; Zhang, Yong-Hang; Petschke, Adam; Mandl, Martin; Chuang, Shun Lien

doi:10.1016/j.jcrysgro.2010.11.003

Cited by 32 publications

(19 citation statements)

References 27 publications

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“…12 Recently, InAs/ InAs 1Àx Sb x SLs grown by metalorganic chemical vapor depostition (MOCVD) have been studied in more detail: these SLs showed excellent structural properties and strong optical response. 13,14 The absence of gallium in these InAs/ InAs 1-x Sb x SLs is expected to simplify the SL interfaces and hence the growth process, 13 and also result in longer carrier lifetimes, 15,16 as very recently demonstrated.…”

Section: Introductionmentioning

confidence: 69%

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Ouyang¹,

Steenbergen²,

Zhang³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Strain-balanced InAs/InAs1−xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1−xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1−xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1−xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1−xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1−xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

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Section: Introductionmentioning

confidence: 69%

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Ouyang¹,

Steenbergen²,

Zhang³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…(100) n-GaSb substrates following deposition of a 50 nm GaSb buffer layer using growth conditions reported previously. 18 The prior Sb compositions of the sample structures were based on growth calibrations 18 and are different from the details shown in Table I, which were determined by analysis of x-ray diffraction (XRD) measurements. The layer thicknesses are still assumed to be the same values from the growth calibrations.…”

Section: Applied Physics Letters 99 071111 (2011)mentioning

confidence: 99%

“…15 InAs/InAs 1Àx Sb x SLs represent another alternative for infrared laser 16 and detector applications due to possible lower SRH recombination, 17 and the absence of gallium, which simplifies the SL interfaces and the growth process. 18 An ideal theoretical comparison of a 10-lm InAs/InAs 1-x Sb x SL with an 11-lm InAs/In x Ga 1Àx Sb SL on GaSb substrates revealed that the performance of the InAs/In x Ga 1-x Sb SL only slightly exceeds that of the InAs/InAs 1-x Sb x SL so that the real distinction between choice of materials will come from practical, growth-related variations. 17 With the major improvements in molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) technologies in the last couple of decades, it is an ideal time to investigate the InAs/InAs 1-x Sb x SL system experimentally.…”

mentioning

confidence: 99%

“…GaSb is the ideal substrate for strain-balancing InAs/InAsSb SLs due to its lattice constant being between that of the two layers, eliminating the need for complicated metamorphic buffer layers and thus simplifying the growth process. 18 As the Sb concentration in the InAs 1Àx Sb x layer increases, the strain of the layer on GaSb increases making the growth more difficult; but reaching LWIR wavelengths (8-12 lm) requires higher Sb concentrations to maintain larger electron-hole wave function overlaps for stronger absorption. We report here a detailed study of the structural and optical properties of thick (50 or 100 periods), InAs/InAs 1Àx Sb x type-II SLs with varying Sb compositions (x ¼ 0.22, 0.23, 0.37) grown by MOCVD on GaSb substrates.…”

mentioning

confidence: 99%

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Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

Steenbergen

Huang

Ryou

et al. 2011

Applied Physics Letters

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Strain-balanced type-II InAs/InAs1–xSbx superlattices with various compositions (x = 0.22, 0.23, 0.37) and different layer thicknesses (tInAs = 7 nm, tInAsSb = 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.

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“…In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings. C In recent years gallium antimonide (GaSb) has become integral to many optical devices 1 including light emitting diodes, 2,3 photodetectors, 4,5 and diode lasers. 6,7 Efficient performance of GaSb-based devices remains elusive.…”

mentioning

confidence: 99%

Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

Wassweiler

Toor

2016

AIP Advances

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The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

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Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Cited by 32 publications

References 27 publications

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

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