Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

Ke, Wen−Cheng; Liang, Zhong-Yi; Tesfay, Solomun Teklahymanot; Chiang, Chih-Yung; Yang, Chong-Yi; Chang, Kuo-Jen; Lin, Jian-Cheng

doi:10.1016/j.apsusc.2019.07.211

Cited by 19 publications

(15 citation statements)

References 49 publications

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“…The destruction mechanism of the graphene layer in a MOCVD epitaxial process was reported elsewhere Figure e further reveals the mechanism of the controlled graphene destruction by an ex situ sputtered AlN CL.…”

Section: Resultssupporting

confidence: 59%

“…However, the J – V – T curves for the carbon-doped 550 °C-AlN–GaN show Schottky rectifying behavior (see Figure b). Based on calculation by the conventional thermionic emission model, , the ideality factor and barrier height from the 303 K J – V characteristic curve are calculated to be 1.5 and 0.72 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Figure shows the preparing sequence of the GI substrate in this study. The detailed process of graphene on a sapphire substrate can be found elsewhere . A series of samples were then prepared by the deposition of an AlN CL (20 nm thick) grown at room temperature (RT-AlN), 300 °C (300 °C-AlN), 500 °C (500 °C-AlN), and 550 °C (550 °C-AlN) onto a GI substrate by radio frequency (RF) magnetic sputtering.…”

Section: Methodsmentioning

confidence: 99%

“…It is also noteworthy that the damaged graphene similar to nanographite provides a solid-state carbon doping source that is diffused and incorporated into GaN. The high carbon doping concentration (i.e., >10 20 cm –3 ) in GaN is achieved using graphene as the solid-state carbon doping source . For further realizing high-device performance of GaN:C SDs, control the carbon doping concentration and enhanced crystallinity of GaN on the graphene interlayer (GI) substrate are necessary.…”

Section: Introductionmentioning

confidence: 99%

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Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Tesfay

Seong

et al. 2019

ACS Appl. Mater. Interfaces

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Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of the graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed because of ammonia precursor etching behavior in a high-temperature epitaxy. The damaged GI, like nanographite as a solid-state carbon doping source, incorporated the epitaxial growth of the GaN layer. The secondary ion mass spectroscopy depth profile indicated that the carbon content in the GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL because of the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. The edge-type threading dislocation density and carbon concentration of the GaN:C layer with an embedded 550 °C-grown AlN CL on a GI substrate can be significantly reduced to 2.28 × 109 cm–2 and ∼2.88 × 1018 cm–3, respectively. Thus, a Ni-based Schottky diode with an ideality factor of 1.5 and a barrier height of 0.72 eV was realized on GaN:C. The series resistance increased from 28 kΩ at 303 K to 113 kΩ at 473 K, while the positive temperature coefficient (PTC) of series resistance was ascribed to the carbon doping that induced the compensation effect and lattice scattering effect. The decrease of the donor concentration was confirmed by temperature-dependent capacitance–voltage (C–V–T) measurement. The PTC characteristic of GaN:C Schottky diodes created by dissociating the GI as a carbon doping source should allow for the future use of high-voltage Schottky diodes in parallel, especially in high-temperature environments.

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Section: Resultssupporting

confidence: 59%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Tesfay

Seong

et al. 2019

ACS Appl. Mater. Interfaces

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“…However, lattice mismatch still exists between GaN and graphene and affects the quality of the GaN film. Similarly, Ke et al reported that high-quality GaN thin films can be grown on a few-layer graphene/sapphire substrate by embedding a hybrid AlN buffer layer, and a nickel-based GaN Schottky contact is realized that shows a stable performance . However, the main advantage of graphene releasing the stress of GaN cannot be fully utilized.…”

Section: Introductionmentioning

confidence: 99%

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

Ning

Yan

Jia

et al. 2020

ACS Appl. Nano Mater.

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GaN-based light-emitting diodes (LEDs) are extremely promising and highly efficient solid-state light sources with long lifetimes. In this study, a stress-free GaN film with optimal quality and a low density of dislocations was obtained on sapphire by embedding a sputtered AlN (S-AlN)/graphene composite buffer layer. The growth of a nucleation-enhanced dislocation–annihilation structure via S-AlN/graphene-assisted quasi-van der Waals epitaxy was proposed here. Sapphire was first sputter-coated with AlN. After transfer of a monolayer graphene onto the 25 nm S-AlN surface, a 1.9 μm GaN thin film was grown by metal–organic chemical vapor deposition. Theoretical first-principles density functional theory calculations were performed to determine the electrostatic potential on the surface of the composite substrate. We also fabricated an UV LED that delivered a stable performance using a high-quality GaN film. Finally, the present work may provide insight into the epitaxial growth of III-N films and demonstrates that fabricating stress-free, high-quality, and transferable III-N films for solid-state lighting is achievable.

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Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

Wang,

Yang,

Zhou

et al. 2023

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Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer‐scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h‐BN composite buffer layer and its application in flexible InGaN‐based light‐emitting diodes (LEDs) is demonstrated. Guided by first‐principles calculations, the nucleation and bonding mechanism of GaN and AlN on h‐BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2‐plasma‐treated h‐BN is over 1 eV larger than that of Ga atoms. It is found that the introduced high‐temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain‐relaxation model for III‐nitrides on h‐BN is proposed. Eventually, the mechanical exfoliation of single‐crystalline GaN film and LED through weak interaction between multilayer h‐BN is realized. The flexible free‐standing thin‐film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.

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Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

Cited by 19 publications

References 49 publications

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode

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