Epitaxial growth and electrical transport properties of Cr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>GeC thin films

Eklund, Per; Bugnet, Matthieu; Mauchamp, Vincent; Dubois, S.; Tromas, C.; Jensen, Jens; Piraux, Luc; Gence, Loïk; Jaouen, M.; Cabioc’h, Thierry

doi:10.1103/physrevb.84.075424

Cited by 62 publications

(42 citation statements)

References 54 publications

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“…The same trend can be observed for M 2 GeC (M = Ti, V, Cr) where the highest resistivity is reported for Cr 2 GeC films [15,18,19]. In the M-Ge-C system, the influence of M-site solid solutions on material properties has been studied for (Ti,V) n+1 GeC n [20] and (…”

Section: Introductionsupporting

confidence: 54%

“…Surface segregation into Ge particles, several hundred nanometers in size, has been reported for Ti 2 GeC 2 [15] and Cr 2 GeC magnetron-sputtered thin films, and has been attributed to fast Ge-diffusion rates along the basal planes [19]. The out-diffusion of group-14 A elements in Ti-A-C MAX phases has been studied by Emmerlich et al, where no surface segregation was found for Ti 3 SiC 2 , while Ti 2 GeC and Ti 2 SnC had extensive surface segregations [15].…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, small Ge particles (on the order of 20 nm), evenly distributed on the terraces, are formed rather than the larger Ge islands seen in Refs. [15] and [19].…”

Section: Resultsmentioning

confidence: 99%

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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Buchholt

Eklund

Jensen

et al. 2012

Journal of Crystal Growth

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Epitaxial Ti 3 GeC 2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti 3 GeC 2 films grow by lateral step-flow with {11 2 0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.

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Section: Introductionsupporting

confidence: 54%

Section: Resultsmentioning

confidence: 99%

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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Buchholt

Eklund

Jensen

et al. 2012

Journal of Crystal Growth

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“…We note that recent experimental results suggest that conductivity in MAX phases may be dependent on electron À phonon coupling, and that it is therefore this phenomenon rather than the electronic structure that dictates to which degree the phase is anisotropic with respect to electrical conductivity. [35][36][37] As discussed in both Refs. 35 and 36, contrary to predictions from the calculated band structures, the investigated MAX phases show surprisingly weak conductive anisotropy.…”

Section: B Electronic Propertiesmentioning

confidence: 99%

First-principles calculations of the electronic, vibrational, and elastic properties of the magnetic laminate Mn2GaC

Thore

Dahlqvist

Alling

et al. 2014

Journal of Applied Physics

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In this paper, we report the by first-principles predicted properties of the recently discovered magnetic MAX phase Mn 2 GaC. The electronic band structure and vibrational dispersion relation, as well as the electronic and vibrational density of states, have been calculated. The band structure close to the Fermi level indicates anisotropy with respect to electrical conductivity, while the distribution of the electronic and vibrational states for both Mn and Ga depend on the chosen relative orientation of the Mn spins across the Ga sheets in the Mn-Ga-Mn trilayers. In addition, the elastic properties have been calculated, and from the five elastic constants, the Voigt bulk modulus is determined to be 157 GPa, the Voigt shear modulus 93 GPa, and the Young's modulus 233 GPa. Furthermore, Mn 2 GaC is found relatively elastically isotropic, with a compression anisotropy factor of 0.97, and shear anisotropy factors of 0.9 and 1, respectively. The Poisson's ratio is 0.25. Evaluated elastic properties are compared to theoretical and experimental results for M 2 AC phases where M ¼ Ti, V, Cr, Zr, Nb, Ta, and A ¼ Al, S, Ge, In, Sn. V C 2014 AIP Publishing LLC.

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“…the observations in Refs. [39,43,44]). The Ti 3 AlC 2 film was ∼ 160 nm thick, as measured from TEM observations.…”

Section: Methodsmentioning

confidence: 99%

Contribution of core-loss fine structures to the characterization of ion irradiation damages in the nanolaminated ceramic Ti3AlC2

et al. 2013

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The effect of low energy ion irradiation in the nanolaminated Ti 3 AlC 2 is investigated by means of X-ray diffraction, transmission electron microscopy, electron energy loss and X-ray absorption spectroscopy. The chemical sensitivity and local order probing from core-loss edges provide new insight in the undertanding of structural modifications induced under irradiation. From the analysis of the C K energy loss near edge structure (ELNES) and Al K X-ray absorption near edge structure (XANES) by ab initio calculations, the influence of the layered structure of this compound on the irradiation damage is demonstrated, with preferentialy localized damage in aluminum planes of the structure. On the basis of comparisons between calculations and the experimental spectra, a strutural model is proposed for the irradiated state. This study emphasizes the utility of core-loss fine structure analysis to further understanding of ion irradiation induced damage in complex crystalline materials.

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Epitaxial growth and electrical transport properties of Cr2GeC thin films

Cited by 62 publications

References 54 publications

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

First-principles calculations of the electronic, vibrational, and elastic properties of the magnetic laminate Mn2GaC

Contribution of core-loss fine structures to the characterization of ion irradiation damages in the nanolaminated ceramic Ti3AlC2

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