Epitaxial growth and electrical-transport properties of Ti7Si2C5 thin films synthesized by reactive sputter-deposition

Scabarozi, T. H.; Hettinger, J. D.; Lofland, S. E.; Lu, Jun; Hultman, Lars; Jensen, Jens; Eklund, Per

doi:10.1016/j.scriptamat.2011.07.038

Cited by 30 publications

(10 citation statements)

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“…In this system, there is also an intergrown phase, Ti 5 Al 2 C 3 , with alternating Ti 2 AlC-like and Ti 3 AlC 2 -like stacking [4,5,6], a type of phase known in several MAX systems [7,8,9,10], but Ti 5 Al 2 C 3 is to date the only one synthesized in bulk with full structure determination [5]. Ti 2 AlC and Ti 3 AlC 2 are promising materials for applications that demand stability at high temperatures and resistance against oxidation.…”

Section: Introductionmentioning

confidence: 99%

Phase stability and initial low-temperature oxidation mechanism of Ti2AlC thin films

Frodelius

Jensen

et al. 2013

Journal of the European Ceramic Society

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Ti2AlC thin films deposited onto Al2O3 by magnetron sputtering were used as model for studying the early stages (andlt; 15 min) of relatively low-temperature (500 degrees C) oxidation of Ti2AlC. The well-defined microstructure of these films forms a surface of valleys, hillocks and plateaus comprised of basal-plane-oriented grains with a fraction of nonbasal-plane-oriented grains with out-of-plane orientation of (1 0 (1) over bar 3) and (1 0 (1) over bar 6) as shown by X-ray diffraction and s electron microscopy. During oxidation, Al2O3 clusters and areas of C-containing titania (TiOxCy) are formed on the surface. A mechanism is proposed in which the locations of the Al2O3 clusters are related to the migration of Al atoms diffusing out of Ti2AlC. The Al2O3 is initially formed in valleys or on plateaus where Al atoms have been trapped while TiOxCy forms by in-diffusion of oxygen into the Al-deficient Ti2AlC. At 500 degrees C, the migration of Al atoms is faster than the oxidation kinetics; explaining this microstructure-dependent oxidation mechanism.

Funding Agencies|Swedish National Graduate School in Materials Science||

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Section: Introductionmentioning

confidence: 99%

Phase stability and initial low-temperature oxidation mechanism of Ti2AlC thin films

Frodelius

Jensen

et al. 2013

Journal of the European Ceramic Society

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Funding Agencies|Swedish National Graduate School in Materials Science||

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“…It follows that the c axis of a M 5 A 2 X 3 phase has to be three times the average of the M 2 AX and M 3 AX 2 c ‐axes. This description has been echoed in several other papers . A complete structure description was, however, not available until we very recently synthesized bulk samples with a high fraction of Ti 5 Al 2 C 3 which, in turn, permitted a complete structure determination .…”

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confidence: 81%

Comment on “Ti₅Al₂C₃: A New Ternary Carbide Belonging to MAX Phases in the Ti–Al–C System”

Lane

Naguib

et al. 2012

J. Am. Ceram. Soc.

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T HE M n+1 AX n phases (n = 1, 2 or 3, M = transition metal, A = A-group element, X = carbon or nitrogen) are usually classified into three groups based on their n values, i.e., "211" for n = 1, "312" for n = 2, etc. In addition, there is also a category of "intergrown phases" such as the "523" and "725" phases, with alternating half-unit-cell layers of "211" and "312" (="523") or "312" and "413" (="725"). These phases were first reported in 2004 in the Ti-Si-C system by Palmquist et al. 1 Since then others were discovered as minority phases in bulk samples, 2 and thin films. [2][3][4][5] Palmquist et al. 1 noted that the alternating stacking of even and odd M layers induces a lateral translation of the A position, breaking the P6 3 /mmc symmetry of the regular MAX phases. Said otherwise, the A atoms are not positioned above each other until after three repetitions. It follows that the c axis of a M 5 A 2 X 3 phase has to be three times the average of the M 2 AX and M 3 AX 2 c-axes. This description has been echoed in several other papers. 6,7 A complete structure description was, however, not available until we very recently synthesized bulk samples with a high fraction of Ti 5 Al 2 C 3 which, in turn, permitted a complete structure determination. 8 We concluded that the space group was P3m1 and the crystal structure indeed consists of three formula units, with a c lattice parameter of 48.23 Å .Very recently, Wang et al. 9 reported on Ti 5 Al 2 C 3 prepared by hot pressing Ti, Al, and C powders, and suggested a structure with P6 3 /mmc space group symmetry. It is important to note at the outset, that neither the X-ray diffraction (XRD) nor transmission electron microscopy (TEM) results presented by Wang et al. are sufficient to verify their proposed stacking sequence. Their hypothetical structure [see Fig. 1(c)] has Ti 1 and Ti 2 at Wyckoff position 4f, Ti 3 at 2d, Al at 4e, C 1 at 2a, and C 2 at 4e with lattice parameters a = 3.038 Å and c = 32.261 Å . The purpose of this comment is to make the case that this structure is most probably incorrect.Our evidence against P6 3 /mmc symmetry is multifold. First, in Wang et al.'s suggested structure, the Ti-C layers appear with a BaCaB stacking [ Fig. 1(c)], where the upper case is for the Ti and the lower case is for the C atoms. This stacking has never been observed in any M n+1 AX n phase with n > 1. In all known 312 and 413 structures, the M-X layers have a stacking sequence of BcAbC.Second, Fig.

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“…17,18 In 2002, the Ti 4 SiC 3 phase had been theoretically predicted, 19 and this sputtering methodology enabled the discovery of the Ti 4 SiC 3 phase as well as two intergrown phases in the form of Ti 5 Si 2 C 3 and Ti 7 Si 2 C 5 , with alternating "211" and "312" or "312" and "413" layers, respectively. 17 In 2011, Scabarozi et al showed that it is possible to deposit almost phase pure and epitaxial Ti 7 Si 2 C 5 by reactive sputtering, 20 and recently the Ti 4 SiC 3 phase has been demonstrated in bulk. [21][22][23] For industrial applications, growth from elemental sputter sources poses limitations for a simple, repeatable and scalable process, shifting the attention back to compound targets.…”

Section: Introductionmentioning

confidence: 99%

Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target

Magnuson

Tengdelius

Greczyński

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors investigate sputtering of a Ti 3 SiC 2 compound target at temperatures ranging from RT (no applied external heating) to 970°C as well as the influence of the sputtering power at 850°C for the deposition of Ti 3 SiC 2 films on Al 2 O 3 (0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by x-ray

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Epitaxial growth and electrical-transport properties of Ti7Si2C5 thin films synthesized by reactive sputter-deposition

Abstract: Eklund, Epitaxial growth and electrical-transport properties of Ti(7)Si(2)C(5) thin films synthesized by reactive sputter-deposition, 2011, Scripta Materialia, (65), 9, 811-814. http://dx

Cited by 30 publications

References 22 publications

Phase stability and initial low-temperature oxidation mechanism of Ti2AlC thin films

Phase stability and initial low-temperature oxidation mechanism of Ti2AlC thin films

Comment on “Ti₅Al₂C₃: A New Ternary Carbide Belonging to MAX Phases in the Ti–Al–C System”

Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target

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Epitaxial growth and electrical-transport properties of Ti7Si2C5 thin films synthesized by reactive sputter-deposition

Abstract: Eklund, Epitaxial growth and electrical-transport properties of Ti(7)Si(2)C(5) thin films synthesized by reactive sputter-deposition, 2011, Scripta Materialia, (65), 9, 811-814. http://dx

Cited by 30 publications

References 22 publications

Phase stability and initial low-temperature oxidation mechanism of Ti2AlC thin films

Phase stability and initial low-temperature oxidation mechanism of Ti2AlC thin films

Comment on “Ti5Al2C3: A New Ternary Carbide Belonging to MAX Phases in the Ti–Al–C System”

Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target

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Comment on “Ti₅Al₂C₃: A New Ternary Carbide Belonging to MAX Phases in the Ti–Al–C System”