Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition

Hossain, Mohammad Zakir; Mimura, T.; Uekusa, S.

doi:10.1016/j.jlumin.2009.03.039

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…[2][3][4] Many techniques have been adopted to produce nanosized β-FeSi 2 materials, for instance, ion beam synthesis, reactive epitaxy, magnetron sputtering, pulsed-laser deposition, and molecular beam epitaxy, and their PL properties have also been explored. [5][6][7][8][9] It has been pointed out that the origin of the PL from β-FeSi 2 is quite complicated because of the controversial band gap structure. Most experiments have suggested that β-FeSi 2 has a direct band gap, [1,[4][5][6] but some reports have indicated otherwise.…”

Section: Introductionmentioning

confidence: 99%

Resonant energy transfer from nanocrystal Si to β-FeSi ₂ in hybrid Si/β-FeSi ₂ film

He¹,

Zhang²,

Wu³

et al. 2013

Chinese Phys. B

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The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.

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Section: Introductionmentioning

confidence: 99%

Resonant energy transfer from nanocrystal Si to β-FeSi ₂ in hybrid Si/β-FeSi ₂ film

He¹,

Zhang²,

Wu³

et al. 2013

Chinese Phys. B

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“…Semiconducting iron di-silicide β-FeSi 2 is one of the most promising materials for the Si-based thin films and optoelectronic devices and photonics. It has optical band gap at 0.80 to 0.89 eV region and ecologically friendly constituents such as non-toxic and abundant on earth [1,2]. Therefore β-FeSi 2 has great potentiality as a silicon-based light emitting material, photovoltaic and solar cell and photnics.…”

Section: Introductionmentioning

confidence: 99%

Effect of Target Composition on the Surface and Optical Properties of the β-FeSi₂ Film Prepared by Pulsed Laser Deposition

Hossain,

Katsumata,

Uekusa

2011

Meet. Abstr.

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Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport

Thabethe

Linganiso

Motaung

et al. 2013

Journal of Luminescence

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The procedures for the synthesis of amorphous ε-FeSi/Si core-shell nanofibres by vapour transport in a CVD configuration are reported. Crystallite studies by the Williamson-Hall method show the sizes to be typically about 8.0 nm which agrees with TEM value of 7.9 nm fibre diameter with a compressive strain of about 0.04. Features in the photoluminescence of these FeSi core-shells in both visible and IR are at 410 nm, 1062 nm, 1414 nm and 1772 nm and absorption feature at 1000 cm −1 from FTIR are explained from density functional theory (DFT) ab initio calculations. PL confirms the intra-band transition whereas FTIR agrees perfectly with the band-to-band transition whose band gap energy is 0.13 eV for FeSi. FTIR also unveils inter-band transition which DFT calculation could not predict. Raman spectroscopy data confirm FeSi and nano-Si presence.

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Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition

Cited by 6 publications

References 17 publications

Resonant energy transfer from nanocrystal Si to β-FeSi ₂ in hybrid Si/β-FeSi ₂ film

Resonant energy transfer from nanocrystal Si to β-FeSi ₂ in hybrid Si/β-FeSi ₂ film

Effect of Target Composition on the Surface and Optical Properties of the β-FeSi₂ Film Prepared by Pulsed Laser Deposition

Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport

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Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition

Cited by 6 publications

References 17 publications

Resonant energy transfer from nanocrystal Si to β-FeSi 2 in hybrid Si/β-FeSi 2 film

Resonant energy transfer from nanocrystal Si to β-FeSi 2 in hybrid Si/β-FeSi 2 film

Effect of Target Composition on the Surface and Optical Properties of the β-FeSi2 Film Prepared by Pulsed Laser Deposition

Visible and IR photoluminescence of c-FeSi@a–Si core–shell nano-fibres produced by vapour transport

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About

Resonant energy transfer from nanocrystal Si to β-FeSi ₂ in hybrid Si/β-FeSi ₂ film

Resonant energy transfer from nanocrystal Si to β-FeSi ₂ in hybrid Si/β-FeSi ₂ film

Effect of Target Composition on the Surface and Optical Properties of the β-FeSi₂ Film Prepared by Pulsed Laser Deposition