The physicochemical properties of thin metal oxide layers strongly depend on the layer thickness and thus differ significantly from their bulk counterpart. In this work, we present the growth of defined thin layers of CeO 2 within mesostructured ZrO 2 thin films using atomic layer deposition (ALD). The prepared films consist of a cubic ordered arrangement of 15 nm spherical mesopores induced by the used diblock copolymer poly(isobutylene)-block-poly(ethylene oxide) (PIB 50 -b-PEO 45 ), which allows studying the growth process and the successful coating of the interior pore surfaces via the combination of scanning electron microscopy (SEM), time-of-flight mass spectrometry (ToF-SIMS), and laser ellipsometry. These methods prove the CeO 2 layer growth and impregnation of the pores up to 100 ALD cycles, at which the interconnecting channels between the mesopore layers are filled completely impeding further transport of the gaseous CeO 2 precursors. X-ray photoelectron spectroscopy (XPS) and diffractometry (XRD) measurements point out the increased amount of Ce 3+ after a low number of ALD cycles and show the presence of cubic CeO 2 with increasing amount of ALD cycles, respectively. Impedance spectroscopic investigation further proves the formation of a continuous CeO 2 path through the entire porous network of the insulating ZrO 2 film and shows a strong influence of the layer thickness on the conductivity. All in all, our work presents the preparation of novel hybrid CeO 2 /ZrO 2 model systems, which enable us to tailor their physicochemical properties by changing the thickness of the active oxide layer, and promises improvements for their use as catalysts in oxidation reactions such as the HCl oxidation reaction or as a threeway catalytic converter in automotives.