Epitaxial growth in large-lattice-mismatch systems

Zheleva, T.; Jagannadham, K.; Narayan, J.

doi:10.1063/1.356440

Cited by 155 publications

(84 citation statements)

References 4 publications

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“…26 When the lattice mismatch is large as in the case between Si and BT, the growth with supercell matching becomes favorable. 27 The XRD data measured on the other samples show the same epitaxial relationships but the crystalline qualities are different. Fig.…”

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confidence: 74%

Crystal structure and epitaxy of Bi2Te3 films grown on Si

Park

Soh

Aeppli

et al. 2012

Applied Physics Letters

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We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi 2 Te 3 grown on Si (1 1 1 Recently, new quantum materials called topological insulators, in which metallic surface states located in the band gap of their insulating bulk are protected by time-reversal symmetry, have been discovered 1-4 and attracted considerable attention due to fascinating properties such as almost dissipationless surface transport and potential for "spintronic" applications. 5,6 Bi 2 Te 3 (BT) is such a topological insulator with the advantages of a nominally stoichiometric material and a large bulk gap. 3 Bulk single crystals of this substance, however, have a considerable disadvantage over the MBE grown II-VI heterostructures for which many of the interesting effects have been first observed 1 in that transport, which is supposed to occur only through the surface states, also involves unwanted bulk channels due to crystal imperfections. 3,7 For electronic device research and applications it is required not only to eliminate these charge carriers but also to fabricate low-dimensional nanostructures. Therefore, growth of undoped thin films of topological insulators with low defect concentration, in which the Fermi level intersects only the metallic surface states, is essential and has been attempted using various methods. Large progress has been made in thin film growth of topological insulators on Si (1 1 1) substrates using the molecular beam epitaxy (MBE) technique. 8 While the authors of ref. 8 have demonstrated the crystal structure of the surface to correspond to that of BT using RHEED, and shown the presence of metallic surface states using ARPES, so far, no quantitative structural

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confidence: 74%

Crystal structure and epitaxy of Bi2Te3 films grown on Si

Park

Soh

Aeppli

et al. 2012

Applied Physics Letters

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“…Bulk ScN crystals have also been proposed as a substrate for gallium nitride, due to its small lattice constant mismatch, -0.1% [6]. Furthermore, epitaxial growth of TiN was investigated on Si and GaAs substrate [7]. Both orientation relationships of TiN In addition, titanium nitride is a major industrial material because of its excellent properties, including abrasive wear resistance, good lubricating characteristics and low diffusivity.…”

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confidence: 99%

Sublimation growth of titanium nitride crystals

Edgar

Kenik

et al. 2009

J Mater Sci: Mater Electron

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“…Usually, in epitaxial growth, the lattice mismatch induced strain energy as well as the interfacial or chemical energy determine the orientation relationship and the epitaxial layer always orients itself in such a way that the lattice mismatch is reduced and the anisotropy interfacial energy is lowered [9]. The lattice constant of two kinds of particles could be estimated from their corresponding SAD pattern.…”

Section: Resultsmentioning

confidence: 99%

Nickel Nanocomposite Thin Films

et al. 2001

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Nickel was deposited on epitaxial TiN matrix layer grown on Si (100) substrate by pulsed laser deposition process (PLD). Transmission electron microscopy (TEM) study shows that nanoparticles formed are single crystals with two kinds of epitaxial relationship with respect to matrix TiN. One is cube on cube, where ( projection and a smaller lattice constant compared with that of pure nickel. The possible mechanism of forming these two epitaxial orientations is discussed. Superconducting quantum interference device (SQUID) magnetometer was used for magnetic measurements. In order to investigate the effect of texturing on magnetic properties of nanoparticles, results were compared with those obtained from Ni nanoparticles grown on amorphous A1 2 0 3 matrix layer in previous research. It was found that both blocking temperature and coercivity of Ni nanoparticles grown on epitaxial TiN matrix are significantly higher than that of Ni grown on amorphous A1 2 0 3 . The higher value of coercivity is possibly associated with the stronger tendency of crystallographically oriented particles to retain their magnetic moments in the presence of reversing magnetic field.

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Epitaxial growth in large-lattice-mismatch systems

Cited by 155 publications

References 4 publications

Crystal structure and epitaxy of Bi2Te3 films grown on Si

Crystal structure and epitaxy of Bi2Te3 films grown on Si

Sublimation growth of titanium nitride crystals

Nickel Nanocomposite Thin Films

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