1996
DOI: 10.1016/0022-0248(96)00187-x
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Epitaxial growth of (110) DyFe2, TbFe2 and Dy0.7Tb0.3Fe2 thin films by molecular beam epitaxy

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Cited by 70 publications
(41 citation statements)
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“…The values of B γ,2 for the Ho/Tm SL's are positive at high temperatures and very close to the Ho/Lu ones, showing a broad peak at around 80-90 K. Below 80 K, B γ,2 start to decrease, reaching a maximum slope on decreasing the temperature at − ∼ 60 K, and undergoing a change of sign at a certain temperature, which is 60 K for Ho 8 16 , where the basal-plane anisotropy of holmium blocks dominates the B γ,2 MEL stress, making the values more positive for this SL, where the thickness of holmium layers is high enough with respect to the thulium ones. This is in good agreement with the magnetization results too [44].…”
Section: Competing Anisotropies In the Magnetoelastic Behavior Of Ho/mentioning
confidence: 59%
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“…The values of B γ,2 for the Ho/Tm SL's are positive at high temperatures and very close to the Ho/Lu ones, showing a broad peak at around 80-90 K. Below 80 K, B γ,2 start to decrease, reaching a maximum slope on decreasing the temperature at − ∼ 60 K, and undergoing a change of sign at a certain temperature, which is 60 K for Ho 8 16 , where the basal-plane anisotropy of holmium blocks dominates the B γ,2 MEL stress, making the values more positive for this SL, where the thickness of holmium layers is high enough with respect to the thulium ones. This is in good agreement with the magnetization results too [44].…”
Section: Competing Anisotropies In the Magnetoelastic Behavior Of Ho/mentioning
confidence: 59%
“…In this section we present a study of two Ho/Tm SL's: Ho 8 /Tm 16 and Ho 30 /Tm 16 , nearly isomorphous to the corresponding Ho n /Lu 15 samples analysed in Sec. 5.…”
Section: Competing Anisotropies In the Magnetoelastic Behavior Of Ho/mentioning
confidence: 99%
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“…11 The ErFe 2 /YFe 2 superlattices were grown by MBE, following a procedure described elsewhere. 12 A 100 Å Nb buffer and 20 Å Fe seed layer were deposited onto epi-prepared sapphire substrate of dimensions 10 mm×12 mm. The Laves phase material was grown in (110) orientation, with the major axes parallel to those of Nb.…”
mentioning
confidence: 99%