“…Recently, an emergent 2D layered material, Bi 2 O 2 Se, has shown noticeable potential in device applications, for instance, phototransistors, ultrafast photodetection, and ferroelectrcity, 26−29 owing to its characteristic narrow band gap, good air stability, local structural distortion, and high carrier mobility. 30 Thus, for highperformance optoelectronic applications, fabricating Bi with PbSe QDs in the form of mixed-dimensional 2D/0D heterostructures was utilized as high-performance and broadband photodetectors. 31 However, studies involving Bi 2 O 2 Sebased mixed-dimensional heterostructures are still in the early stage.…”