Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Zorman, Christian A.; Fleischman, Aaron J.; Dewa, A.S.; Mehregany, Mehran; Jacob, Chacko; Nishino, Seiji; Pirouz, Pirouz

doi:10.1063/1.359745

Cited by 229 publications

(121 citation statements)

References 7 publications

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“…[5][6][7][8][9][10][11][12] Some straightforward advantages are cheaper and larger substrate area, Si-SiC device integration, Si-GaN device integration through a SiC intermediate layer, and thermal dissipation improvement of GaN devices, since Si thermal conductivity is almost the same as the GaN. In this work, we are investigating the possibility of obtaining a SiC layer on Si͑111͒ by using ion implantation technique, which is deeply employed in Si processing steps.…”

Section: Introductionmentioning

confidence: 99%

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Maltez

Oliveira

Reis

et al. 2006

Journal of Applied Physics

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We have investigated SiC layers produced by ion beam synthesis on Si͑111͒ substrates using different procedures. Bare Si͑111͒ and SiO 2 /Si͑111͒ structures were implanted with carbon at 40 keV up to a fluence of 4 ϫ 10 17 cm −2 at a temperature of 600°C. Postimplantation annealing was carried out at 1250°C for 2 h in pure O 2 or Ar ͑with 1% of O 2 ͒. A SiC layer was synthesized for all the procedures involving annealing under Ar. However, for the samples annealed under pure O 2 flux, only that employing implantation into the bare Si͑111͒ resulted in SiC synthesis. Rutherford backscattering spectrometry shows that, after annealing, the stoichiometric composition is obtained.Transmission electron microscopy measurements demonstrate the synthesis of cubic-SiC layers that are completely epitaxial to the Si͑111͒ substrate. However, there is a high density of nanometric twins, stacking faults, and also narrow amorphous inclusions of laminar shape between the crystalline regions. The procedure based on high temperature implantation through a SiO 2 cap, etching the cap off, 1250°C postimplantation annealing under Ar ambient ͑with 1% of O 2 ͒, and final etching has shown advantages from the point of view of surface flatness and increased layer thickness, keeping the same layer epitaxy and accurate composition.

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Section: Introductionmentioning

confidence: 99%

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Maltez

Oliveira

Reis

et al. 2006

Journal of Applied Physics

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“…An alternative to 4H-SiC is to use the cubic polytype 3C-SiC, which has the zincblende crystal structure and can also be grown as large single crystals and epitaxial films. 11,12 The divacancy and NV center are expected to behave similarly in 3C-SiC and 4H-SiC, but the higher symmetry of the 3C polytype eliminates the problem of symmetryinequivalent configurations. In addition, its smaller band gap (2.36 eV, 20 0.9 eV smaller than that of 4H-SiC) could potentially be favorable for stabilizing the desired charge states, provided the relevant defect states are not too close to, or resonant with, the valence or conduction bands.…”

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confidence: 99%

Defects as qubits in3C−and4H−SiC

2015

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We employ hybrid density functional calculations to search for defects in different polytypes of SiC that may serve as qubits for quantum computing. We explore the divacancy in 4H-and 3C-SiC, consisting of a carbon vacancy adjacent to a silicon vacancy, and the NV center in 3C-SiC, in which the substitutional NC sits next to a Si vacancy (NC-VSi). The calculated excitation and emission energies of the divacancy in 4H-SiC are in excellent agreement with experimental data, and aid in identifying the 4 unique configurations of the divacancy with the 4 distinct zero-phonon lines observed experimentally. For 3C-SiC, we identify the paramagnetic defect that was recently shown to maintain a coherent quantum state up to room temperature as the spin-1 neutral divacancy. Finally, we show that the (NC-VSi) − center in 3C-SiC is highly promising for quantum information science, and we provide guidance for identifying this defect.

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“…The heteroepitaxial process is a three-step detailed growth procedure. (15) However, heteroepitaxial 3C-SiC fi lms are not exactly suitable for the surface-micromachined lateral resonant-type device described in this study. This type cannot be electrically isolated from the underlying substrate because the device is situated directly on top of a Si wafer.…”

Section: Single-crystal 3c-sic Resonators (Type K)mentioning

confidence: 99%

Solid Internal Energy Dissipation of 3C Single-Crystal Silicon Carbide Micromechanical Resonators by Heterojunction Growth on Silicon

2010

Sensors and Materials

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A previous report shows that a 100-nm-thick free-free beam, single-crystal silicon carbide (SiC) resonator has quality factors 10 times lower than those made with a 10-μm-thick single-crystal SiC cantilever even though the free-free beam is supposed to have lower clamping loss. (1,2) This manuscript explores the above-mentioned difference using the heterojunction growth of (110) 3C-silicon carbide deposited as structural fi lms of micromechanical resonators on single-crystal silicon and polycrystalline silicon. The polycrystalline SiC resonators with smaller clamping losses were fabricated to contrast with the resonators made of single-crystal SiC. The analysis showed that solid internal energy dissipation may play a more important role than the other losses operated in tens of kilohertz. The resonators with a 2-μm-thick single-crystal SiC having Qs between the previous reports may suggest a higher defect density near the interface, which causes high solid internal dissipation. Although an electrical measurement technique was used, the dominance of this material property appeared to be due to grain size instead of conductivity.

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Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Cited by 229 publications

References 7 publications

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Defects as qubits in3C−and4H−SiC

Solid Internal Energy Dissipation of 3C Single-Crystal Silicon Carbide Micromechanical Resonators by Heterojunction Growth on Silicon

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