2019
DOI: 10.1038/s41586-019-1226-z
|View full text |Cite
|
Sign up to set email alerts
|

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

12
480
3
1

Year Published

2019
2019
2023
2023

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 515 publications
(507 citation statements)
references
References 37 publications
12
480
3
1
Order By: Relevance
“…On the other hand, chemical vapor deposition (CVD) is a welldeveloped method to grow high quality 2D materials and to fabricate electronic devices on various substrates 18 , which provides the possibility to directly obtain perfect vdW contacts with metals, like graphene grown on Cu (111) surface 19 and hBN grown on Cu (110) surface 20 . As to the CVD growth of TMDs, insulating substrates are commonly used 21 and Au is almost the only metal substrate and is known to form vdW interfaces with TMDs thanks to its chemical stability in chalcogen-rich environments during CVD [22][23][24][25] .…”
mentioning
confidence: 99%
“…On the other hand, chemical vapor deposition (CVD) is a welldeveloped method to grow high quality 2D materials and to fabricate electronic devices on various substrates 18 , which provides the possibility to directly obtain perfect vdW contacts with metals, like graphene grown on Cu (111) surface 19 and hBN grown on Cu (110) surface 20 . As to the CVD growth of TMDs, insulating substrates are commonly used 21 and Au is almost the only metal substrate and is known to form vdW interfaces with TMDs thanks to its chemical stability in chalcogen-rich environments during CVD [22][23][24][25] .…”
mentioning
confidence: 99%
“…For example, the SiO 2 substrate results in a suppression of the average mobility 750 ± 350 cm 2 V −1 s −1 compared to HfO 2 and polyimide substrates, whose value reaches up to 4.9 × 10 3 cm 2 V −1 s −1 . Carrier mobility up to 10 000–197 600 cm 2 V −1 s −1 was achieved by encapsulating graphene in h‐BN, providing unprecedented possibilities for sensing applications if considering recent progress toward the growth of large‐area high‐quality, single‐crystal graphene and h‐BN monolayer on Cu …”
Section: Principle Fabrication and Operation Of Graphene Nanoelectrmentioning
confidence: 99%
“…[163,164] Besides, some prototype demonstrations of 2D layered materials applications in neuromorphic computing are achieved on the basis of mechanical approach. But the associated challenges cannot be overlooked.…”
Section: Challenges and Outlookmentioning
confidence: 99%