1997
DOI: 10.1016/s0025-5408(97)00159-1
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Epitaxial growth of BaZrO3 films on single crystal oxide substrates using sol-gel alkoxide precursors

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Cited by 45 publications
(16 citation statements)
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“…On the other hand, there is disagreement on the need for seed layer to grow epitaxial STO thin films by CSD (29,30).…”
Section: Discussionmentioning
confidence: 99%
“…On the other hand, there is disagreement on the need for seed layer to grow epitaxial STO thin films by CSD (29,30).…”
Section: Discussionmentioning
confidence: 99%
“…The success of this process was established with the achievement of 1.0 V OCV at 650°C [31]. Numerous significant progresses across the globe are discussed in various articles [3,[32][33][34][35][36][37][38][39][40][41][42][43][44][45][46].…”
Section: Discovery and Progress Of Csdmentioning
confidence: 99%
“…Hence, the newly generated alkoxide is less prone to hydrolysis, thereby allowing easy formation of gel instead of precipitate [35]. As for example, 2-methoxyethanol was used to dissolve Ba metal and partially substitute propoxide of zirconium propoxide for the fabrication of epitaxial BZY film.…”
Section: Sol-gel Processmentioning
confidence: 99%
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“…Thus, further study on the buffer material is still required for the IBAD-MgO template. In this study, we have selected (BZO) as a potential buffer layer on the IBAD-MgO template since BZO shows an excellent chemical compatibility with YBCO and also small lattice-mismatch ( 0.5%) with MgO [15], [16]. We here report the effects of PLD processing parameters, including substrate temperature and ambient pressure , on the BZO buffer layers.…”
Section: Introductionmentioning
confidence: 99%