Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

Plaza, Manuel; Abuín, M.; Mascaraque, A.; Barrio, Miguel Ángel González; Pérez, Lucas

doi:10.1016/j.matchemphys.2012.03.027

Cited by 8 publications

(6 citation statements)

References 33 publications

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“…Using the values of the bulk material, the vertical directions in Figure a and Figure b have a mismatch of 3%, whereas the horizontal directions present a mismatch of 13%. This result is in agreement with other studies. ,, …”

Section: Resultssupporting

confidence: 94%

“…Other authors have obtained electrodeposited Bi films with the same texture on these GaAs orientations. 19,30,31 In the case of Bi films grown on GaAs(110) substrates, there is also a small contribution of Bi(012) planes when Proc. 1 is followed, which indicates a higher crystal disorder.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…This result is in agreement with other studies. 19,30,31 In Bi(012) films grown on GaAs(111)B, Bi(110), and GaAs(220) asymmetric-Bragg reflections were selected for φ-scans (Figure 7b). GaAs(220) shows three reflections in agreement with its 3-fold symmetry.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…However, the breaking of the 3D translation symmetry at the substrate surface supposes the appearance of dangling bonds that act as states in the middle of the gap. The density, geometry and charging character of the dangling bonds (donor or acceptor states depending on the atom) depends on the substrate orientation, leading to different surface state band structures. − Therefore, the surface orientation strongly affects the electrochemical properties of the substrate surface and the electrical properties of the metal–semiconductor interface. ,− Although other authors have studied the electrodeposition of Bi on GaAs substrates with different surface orientations, ,− the discrimination between the effect of surface atomic arrangement and surface chemistry has not been done yet.…”

Section: Introductionmentioning

confidence: 99%

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Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates

et al. 2016

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We have studied the electrodeposition of Bi thin films on two GaAs orientations with different atomic arrangement and chemical composition, (110) and (111)B. The electrochemical properties of each substrate have been analyzed by means of cyclic voltammetries and current transients. Then, x-ray diffraction has been used to determine the crystal structure and quality of the Bi films, and atomic force microscopy images have provided information about the surface morphology. Finally, the Bi/GaAs interface has been electrically characterized by means of capacitance-voltage and current-voltage curves. In this study, we have been able to discriminate between the effect of surface chemistry and the arrangement of surface atoms. The former has a direct effect on the reduction process of Bi(III) ions and on the electrical properties of the Bi/GaAs interface, whereas the atoms arrangement at the substrate surface determines the texture and morphology of the Bi films.3

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Section: Resultssupporting

confidence: 94%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates

et al. 2016

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“…The growth modes of high-quality thin films are usually divided into epitaxial growth and preferred orientation of growth. The key factor of epitaxial growth is the lattice matching relationship between the films and the substrates (Kokubo et al, 2015;Cho et al, 1998;Plaza et al, 2012). In contrast, the preferred orientation growth is mainly affected by the surface energy rather than the lattice matching.…”

Section: Introductionmentioning

confidence: 99%

Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

Wang

Dai

Wang

et al. 2020

IUCrJ

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The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the effect of the thickness and surface roughness on the transport properties was investigated, especially for Bi thin films in Zone II. A two-transport channels model was adopted to reveal the influence of the film thickness on the competition between the metallic surface states and the semiconducting bulk states, which is consistent with the results of Bi single-crystal films. Therefore, the polycrystalline Bi thin films are expected to replace the single-crystal films in the application of spintronic devices.

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Nanostructured Tungsten Trioxide Thin Films Synthesized for Photoelectrocatalytic Water Oxidation: A review

2014

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The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future.

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Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

Cited by 8 publications

References 33 publications

Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates

Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates

Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

Nanostructured Tungsten Trioxide Thin Films Synthesized for Photoelectrocatalytic Water Oxidation: A review

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