Epitaxial growth of CdTe films on GaAs-buffered (001) Si substrates by metal organic chemical vapor deposition

Kim, Kwang Chon; Baek, Seung Hyub; Choi, Won Jun; Kim, Hyun Jae; Song, Jin Dong; Kim, Jin Sang

doi:10.1016/j.matlet.2012.07.070

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…As one of the most important heterostructures, CdTe/GaAs has attracted considerable attention in a number of important fields 1,2 such as infrared detectors, [3][4][5] solar cells, 6 and nuclear radiation detectors. 5,7,8 In addition to these traditional applications, 9 GaAs and CdTe also have interesting properties for potential applications in spintronics devices 10,11 such as nuclear spin polarization, 12 electron spin relaxation, 13 spin coherence 14 and spin injection.…”

Section: Introductionmentioning

confidence: 99%

Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface

Wang

Zha

et al. 2016

Phys. Chem. Chem. Phys.

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The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As-Te and Ga-Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga-Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.

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