Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation

Lin, Wen‐Tai; Meng, Ling‐Cheng; Chen, Guoju; Liu, Hok‐Shin

doi:10.1063/1.113904

Cited by 98 publications

(42 citation statements)

References 11 publications

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“…The equilibrium crystal structures of the nitride precipitates occurring in (recrystallized and subsequently) nitrided Fe-Cr and Fe-Al alloys are the cubic, rock-salt structure for CrN [12,13,16] and the hexagonal, wurtzite structure for AlN [23][24][25][26]; a metastable rock-salt structure is possible for AlN [50,51]. The formation of the cubic CrN upon nitriding is relatively fast, whereas the formation of the hexagonal AlN, due to the relatively large volume misfit between this nitride and the ferrite matrix, is relatively very slow [24].…”

Section: Discussionmentioning

confidence: 99%

Normal and excess nitrogen uptake by iron-based Fe–Cr–Al alloys: the role of the Cr/Al atomic ratio

Jung

Schacherl

Bischoff

et al. 2011

Philosophical Magazine

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Section: Discussionmentioning

confidence: 99%

Normal and excess nitrogen uptake by iron-based Fe–Cr–Al alloys: the role of the Cr/Al atomic ratio

Jung

Schacherl

Bischoff

et al. 2011

Philosophical Magazine

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“…Under special conditions, zinc-blende structure AlN is possible, and at high pressures and temperatures AlN can also be synthesized in a cubic phase, for example as epitaxial films onto Si substrates [28] or stabilized in a TiN/AlN superlattice [29].…”

Section: Alnmentioning

confidence: 99%

Metastable YAlN and ScAlN thin films: growth and characterization

Žukauskaitė¹

2012

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ScxAl1-xN and YxAl1-xN thin films were deposited in a ultra high vacuum system using reactive magnetron co-sputtering from elemental Al, Sc and Y targets in Ar/N2. Their mechanical, electrical, optical, and piezoelectrical properties were investigated with the help of transmission electron microscopy, xray diffraction, ellipsometry, I-V and C-V measurements, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and

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“…(a) and layered hexagonal (b) In my research, ScN was only used as a seed layer for Sc Paper 4) due to a better in 7 orientation of the material axis, is preferred application for tilted AlN thin films is biosensors, where measurements are performed in liquid, so the shear mode wave propagation has to be promoted blende structure AlN is possible, and at high pressures and temperatures AlN can also be synthesized in a cubic phase, for example as epitaxial films onto Si substrates [29] AlN films served mostly as optimizing growth parameters and as reference during the characterization.…”

Section: Scnmentioning

confidence: 99%

“…It is also a wide eV according to Ref. [32]), and (a) and layered hexagonal (b) In my research, ScN was only used as a seed layer for Sc due to a better in orientation of the material is preferred [27] application for tilted AlN thin films is biosensors, where measurements are performed in liquid, so the shear mode wave propagation has to be promoted blende structure AlN is possible, and at high pressures and temperatures AlN can also be synthesized in a cubic phase, for [29] …”

Section: Scnmentioning

confidence: 99%

Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy

Žukauskaitė¹

2014

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Films putter ilms The cover imageThe image on the cover is based on an elemental energy dispersive x-ray spectroscopy map of Sc0.2Al0.8N deposited at 400°C obtained in a transmission electron microscope. Each individual square represents an area of ~1x1 nm. Here, scandium was assigned the green color, and aluminum is mapped using purple. No tendencies to cluster into Sc-rich or Al-rich regions can be seen, indicating a solid solution.A special Thank You for recording this data goes to Dr. Justinas Pališaitis! © Agnė Žukauskaitė Printed by LiU-Tryck Linköping, Sweden, 2014 i Abstract Metastable ScxAl1-xN and YxAl1-xN thin films were deposited in an ultra high vacuum system using reactive magnetron sputter epitaxy from elemental Al, Sc, and Y targets in Ar/N2 gas mixture. Their structural, electrical, optical, mechanical, and piezoelectrical properties were investigated by using the transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, I-V and C-V measurements, nanoindentation, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and double beam interferometry.Compared to AlN, improved electromechanical coupling and increase in piezoelectric response was found in ScxAl1-xN/TiN/Al2O3 structures with Sc content up to x=0.2. Decreasing the growth temperature down to 400 °C improved the microstructure and crystalline quality of the material. Microstructure of the films had a stronger influence on piezoelectric properties than the crystalline quality, which affected the leakage currents. When x was increased from x=0 to x=0.3, the hardness and reduced Young's modulus Er showed a decrease from 17 GPa to 11 GPa, and 265 GPa down to 224 GPa, respectively. In ScxAl1-xN/InyAl1-yN superlattices, ScxAl1-xN layers negative lattice mismatched to In-rich InyAl1-yN were found to be stable at higher Sc concentration (x=0.4) than lattice-matched or positive lattice mismatched layers, confirmed by first principle (ab initio) calculations using density-functional formalism.Al-rich YxAl1-xN thin films were synthesized and reported for the first time. Den andra delen av min avhandling handlar om det helt outforskade materialet yttrium-aluminium-nitrid (YxAl1-xN). Jag är den första att rapportera om tunnfilmer av YxAl1-xN i wurtzitstruktur och detta material är, likt ScxAl1-xN, också metastabilt. Jag visar att kristallkvaliteten förbättras genom att i detta fall öka processtemperaturen från 700 °C upp till 900 °C, detta därför att yttriumatomer är relativt stora och behöver mer energi för att placera sig på rätt ställe i wurtzitstrukturen. Jag har även visat hur de optiska egenskaperna hos YxAl1-xN påverkas genom legering med olika halt av yttrium.En jämförelse mellan dessa två metastabila material leder till en djupare förståelse för vad som behövs, tex. hur processparametrar ska väljas, för att skapa tidigare oprövade material med bra kristallkvalitet och nya spännande egenskaper som kan lösa olika teknologiska problem.

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Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation

Cited by 98 publications

References 11 publications

Normal and excess nitrogen uptake by iron-based Fe–Cr–Al alloys: the role of the Cr/Al atomic ratio

Normal and excess nitrogen uptake by iron-based Fe–Cr–Al alloys: the role of the Cr/Al atomic ratio

Metastable YAlN and ScAlN thin films: growth and characterization

Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy

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