Epitaxial growth of ErAs on (100)GaAs

Palmstro, C. J.; Tabatabaie, N.; Allen, S. J.

doi:10.1063/1.100173

Cited by 137 publications

(54 citation statements)

References 16 publications

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“…They claimed that the conduction electrons exhibit almost d character; thus the exchange interaction depends on the amount of overlapping between d wave functions. Palmstrøm et al [50] successfully grew single-crystal ErAs fi lms on GaAs in 1988. Later magneto-transport measurements showed that ErAs is a low-density semimetal that magnetically orders at low temperature (4.5-4.8 K) [51].…”

Section: Early Experiments and Theoretical Studiesmentioning

confidence: 99%

Electronic, magnetic and transport properties of rare-earth monopnictides

Duan

Sabirianov

Mei

et al. 2007

J. Phys.: Condens. Matter

189

152

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The electronic structures and magnetic properties of many rare-earth monopnictides are reviewed in this article. Possible candidate materials for spintronics devices from the rare-earth monopnictide family, i.e. high polarization (nominally half-metallic) ferromagnets and antiferromagnets, are identifi ed. We attempt to provide a unifi ed picture of the electronic properties of these strongly correlated systems. The relative merits of several ab initio theoretical methods, useful in the study of the rare-earth monopnictides, are discussed. We present our current understanding of the possible half-metallicity, semiconductor-metal transitions, and magnetic orderings in the rare-earth monopnictides. Finally, we propose some potential strategies to improve the magnetic and electronic properties of these candidate materials for spintronics devices.

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Section: Early Experiments and Theoretical Studiesmentioning

confidence: 99%

Electronic, magnetic and transport properties of rare-earth monopnictides

Duan

Sabirianov

Mei

et al. 2007

J. Phys.: Condens. Matter

189

152

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“…ErAs is a semimetal that has the cubic rock salt structure ( † a ErAs = 0.573 nm) and is known to grow epitaxially on arsenide semiconductors with the zincblende structure [5], such as GaAs and In 0.53 Ga 0.47 As ( † a GaAs = 0.56538 nm and † a In 0.53 Ga 0.47 As = 0.5869 nm). The atomic structure of epitaxial layered ErAs/GaAs heterostructures and of epitaxial ErAs nanoparticle/semiconductor composites has been studied experimentally and theoretically [5][6][7][8][9][10][11]. For example, it has been shown that the As sublattice is continuous across the interface in both types of heterostructures [9,11].…”

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confidence: 99%

Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs

Klenov

Zide

Zimmerman

et al. 2005

Applied Physics Letters

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High-angle annular dark-field (HAADF) imaging in scanning transmission electron microscopy was used to determine the atomic structure of interfaces between epitaxial ErAs layers with the cubic rock salt structure and In0.53Ga0.47As and GaAs, respectively. All layers were grown by molecular-beam epitaxy. We show that the interfacial atomic arrangement corresponds to the so-called chain model, in which the zinc blende semiconductor is terminated with a Ga layer. Image analysis was used to quantify the expansion between the first ErAs plane and the terminating Ga plane. In the HAADF images, a high intensity transfer from the heavy Er columns into the background was observed in the ErAs layer, whereas the background in In0.53Ga0.47As was of much lower intensity.

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“…In the light of channeling experiments performed on Er-implanted [17], MBE grown GaAs:Er, doping at the impurity level [18], and in ultra thin ErAs layers in GaAs [19], an interstitial location of optically active Er seems to be well established. However, the reasons of such unexpected correlation remains unclear.…”

Section: Erbium In Iii-v Compoundsmentioning

confidence: 99%

Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

Kozanecki

1993

Acta Phys. Pol. A

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Lattice location experiments performed on Yb-and Er-doped III-V semiconducting compounds using Rutherford backscattering and channeling have been reviewed. It has been shown that Yb atoms locate substitutionally in InP and InP-based ternary alloys, while in gallium compounds no substitutional fraction of Yb could be detected. An intense intra-4f-shell luminescence of Yb3 + has been observed in In compounds. The photoluminescence spectra of Yb3 + reflect local alloy disorder in InPAs and GaInP, suggesting that the Yb atoms are tetrahedrally coordinated. No Yb-related emission could be observed in gallium compounds, except a weak Yb3+ photoluminescence in GaP. An evidence has been presented that Er atoms introduced into III-V compounds locate predominantly at interstitial positions. In GaAs they move into tetrahedral lattice sites as a result of thermal annealing at temperatures higher than 600°C. The location of Er atoms at substitutional positions is accompanied with the disappearance of the intra-4f-shell luminescence of Er3 +. The reasons of the observed correlation of luminescence properties and positions of Er and Yb atoms in zincblende lattices are discussed.

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Epitaxial growth of ErAs on (100)GaAs

Cited by 137 publications

References 16 publications

Electronic, magnetic and transport properties of rare-earth monopnictides

Electronic, magnetic and transport properties of rare-earth monopnictides

Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs

Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

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