Epitaxial growth of Ga x In1−x As film by RF sputtering and physical properties of the films

Abstract

Single crystal Gaxlnl-xAs films have grown up on GaAs(100) substrate at 37512 and on InP(100) substrate at 39012, respectively, by the method of d-sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si( 111 ) substrates at 260 --39012, even at 46512, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the GaxIn 1 -xAs films were investigated using X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X-ray (EDAX), Hall measurements and spectroscopic ellipsometry.

A longitudinal study of foreign language anxiety and enjoyment

“…communication via social media, office hour and various class activities organized by students), which may help build mutual trust between the two. Moreover, to improve learners' attitude towards FL learning, it may be helpful to remind students that FL learning is not just about language, but about the development of communicative competence which is an agglomerate of linguistic competence, pragmatic, cognitive and affective competence (Li, 1986). In this sense, learning to communicate with different people and building social bonds are part of language learning.…”

The Effect of Exchange Interaction on Phase Transition Behavior of Magnetic Nanotubes

“…At the same time, effective field theory was used to examine the phase transition behavior of mixed spin systems on nanotubes, and the reentrant phenomena were discovered [13] . Under certain conditions, the system's phase transition can be modified, and there are three critical points in the facies diagram [14] . According to Li et al's research, the relationship between a system's phase transition behavior and its value probability, crystal field strength ratio, crystal field parameters, temperature, and the shell is closest to neighbor exchange interaction [15] .…”