Epitaxial Growth of GaN on (1 0 0) β-Ga₂O₃ Substrates by Metalorganic Vapor Phase Epitaxy

Abstract

Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated for the first time on β-Ga2O3 single crystal substrates, which are near-UV transparent and n-type conductive. High-quality (0 0 0 1) GaN epi-layer with a narrow bandedge luminescence was obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structure was also successfully grown. The first blue light-emitting diode (LED) on β-Ga2O3 with vertical current injection is demonstrated.

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

“…[1][2][3] Its material properties are especially suited for high-voltage and high-power device applications and then even expected to be better than SiC and GaN. 4 The availability of native low-cost substrates is also an advantage of β-Ga2O3 over other wide bandgap semiconductors.…”

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

“…13 Ga 2 O 3 has other advantages over other substrates, including high conductivity (Sn dopants increases its conductivity to be $1 S cm À1 ) 14 and high transparency in the visible and UV spectral regions due to its wide band gap (4.8 eV), 15 thus combining the advantages of Al 2 O 3 and SiC substrates. Preliminary studies on the molecular beam epitaxial (MBE) growth of GaN on monoclinic (100) b-Ga 2 O 3 have already been reported, although they showed low GaN quality and low reproducibility 16 because of the cleavage of the Ga 2 O 3 (100) plane, which causes the striping of the epilayer and substrate. Currently, the growth of GaN on the ( 201) plane of Ga 2 O 3 is under investigation for the development of InGaN LEDs.…”

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

“…Single-crystal substrates of corundum-structured α-Al 2 O 3 (sapphire) are widely used as starting substrates for the heteroepitaxial growth of group-III nitrides, owing to their thermal and chemical stabilities. [1][2][3] β-gallia-structured Ga 2 O 3 (β-Ga 2 O 3 ) is one of the key materials for future high-power and light-emitting device applications, [4][5][6][7][8] because β-Ga 2 O 3 has several useful properties such as a wide bandgap, n-type dopability, and the availability of large-diameter single-crystal wafers synthesized by melt growth methods such as the floating zone (FZ) 9,10) and edge-defined film-fed growth (EFG) 8,11) methods. In 2 O 3 has been an attractive material of transparent electrodes for optoelectronic applications.…”