Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy

Fujita, Nobuhiko; Yoshizawa, Masaki; Kushi, Kouichi; Sasamoto, Hajime; Kikuchi, Akihiko; Kishino, Katsumi

doi:10.1016/s0022-0248(98)00319-4

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…Consequently, the precise control of the V/III ratio is required for the growth. Similar results on the conventional MBE growth were reported previously [7].…”

Section: Resultssupporting

confidence: 91%

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Honda

Hayashi

Sugiura

et al. 2013

Phys. Status Solidi C

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The low‐temperature growth of GaN on (0001) sapphire and (111)Al substrates by compound‐source molecular beam epitaxy (CS‐MBE) with was investigated. Although precise control of the V/III ratio was required for the growth, the near‐bandedge‐emission (NBE)‐dominant photoluminescence spectra of hexagonal GaN layers were observed at RT. The GaN layers were also grown on aluminum substrates with and without nitridation by CS‐MBE. Reflection high‐energy electron diffraction patterns of the layers indicate that the nitridation is effective for GaN growth by CS‐MBE on aluminum substrates. For further improvement of the GaN crystalline quality, the use of epitaxially grown Al layers as the substrates for the growth was proposed. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Consequently, the precise control of the V/III ratio is required for the growth. Similar results on the conventional MBE growth were reported previously [7].…”

Section: Resultssupporting

confidence: 91%

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Honda

Hayashi

Sugiura

et al. 2013

Phys. Status Solidi C

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“…The growth mode of GaN epitaxial film by conventional molecular beam epitaxy (MBE) is mainly governed by the III/V (Ga/N) ratio at the typical growth temperature (600-800 C), which is generally classified into a surface stoichiometry regime such as V-rich (III=V < 1) or III-rich (III=V > 1). [22][23][24] These regimes can be classified by growth rate (thickness), 22) surface morphology, 23) and RHEED pattern. 24) Typically, when the GaN film is grown in the V-rich regime, three-dimensional (3D) growth occurs, which corresponds to a spotty RHEED pattern.…”

Section: Resultsmentioning

confidence: 99%

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

Park

Wakahara

Okada

et al. 2011

Jpn. J. Appl. Phys.

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The growth mode of europium (Eu)-doped GaN epitaxial films grown on a GaN template by rf plasma-assisted molecular beam epitaxy (PAMBE) was investigated with different III/V ratios under a constant Eu beam equivalent pressure ratio [P Eu/(P Eu+P Ga)]. The reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) images revealed the transition of the growth mode from three-dimensional (3D) to step-flow/two-dimensional (2D) by increasing the III/V ratio. When the films were grown in the 3D growth mode, Eu concentrations estimated by Rutherford backscattering spectrometry/channeling (RBS/channeling) were almost constant, although the III/V ratios varied. However, when the growth mode was transferred from 3D to step-flow/2D, precipitates on the surface abruptly increased while the Eu concentration abruptly decreased, indicating the abrupt degradation of Eu-incorporation in the film. Luminescence sites of Eu3+ were sensitive to the III/V ratio, and Eu atoms have different luminescence sites in both growth modes. Furthermore, luminescence efficiency abruptly increased when the growth mode was transferred from 3D to step-flow/2D.

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“…Therefore, buffer layers in MBE easily crystallize and sometimes become nearly single crystalline. [5][6][7][8] Recently, we found that a very thin amorphous buffer layer deposited at a low temperature was effective in improving MBE-grown GaN epilayers. In this work, we study, we examine how the conditions of buffer layer deposition, e.g., temperature, thickness, and annealing, affect the quality of MBE-grown GaN epilayers.…”

Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxial Growth of GaN on (0001) Al₂O₃ Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature

Kimura

Takahashi

2000

Jpn. J. Appl. Phys.

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The effects of buffer layer quality and/or deposition conditions on the molecular beam epitaxy of GaN on c-Al 2 O 3 substrates were investigated. In order to precisely determine the effects of a thin buffer layer, atomically flat and monolayer-stepped Al 2 O 3 substrates were prepared by conventional chemical etching with a H 3 PO 4 : H 2 SO 4 solution. A significant improvement in the crystalline quality of the GaN epilayer was achieved when ultrathin amorphous buffer layers deposited at temperatures as low as 125 • C were used. It was found that low-temperature deposition leading to an amorphous buffer layer is important for the optimization of the subsequent GaN epitaxial layer. The thickness of the buffer layer is critical; only a very thin amorphous layer can be well crystallized during the thermal annealing process before epilayer growth. It was found that GaN epilayers grown on this buffer layer gave rise to band-edge emissions (357 nm/FWHM = 19.7 meV) without any deep emissions in low-temperature photoluminescence and led to (0002) X-ray rocking curves with a full-width at half maximum of about 9.8 arcmin.

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Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy

Cited by 9 publications

References 7 publications

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

Molecular Beam Epitaxial Growth of GaN on (0001) Al₂O₃ Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature

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Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy

Cited by 9 publications

References 7 publications

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

Molecular Beam Epitaxial Growth of GaN on (0001) Al2O3 Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature

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Product

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Molecular Beam Epitaxial Growth of GaN on (0001) Al₂O₃ Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature