Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy

Gayakwad, Dhammapriy; Singh, Dushyant; Kumar, Rahul; Mazur, Yuriy I.; Yu, Shui-Qing; Salamo, Gregory J.; Mahapatra, S.; Khiangte, Krista R.

doi:10.1016/j.jcrysgro.2023.127306

Cited by 5 publications

(2 citation statements)

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“…Moreover, the exceptional matching between the coefficient of thermal expansion of sapphire and III−V semiconductors is a very important advantage over other substrates, such as silicon. 3 The electron mobility is relatively high in GaAs, so in the same platform, electronics and optical devices would be integrated if high-quality GaAs can be grown on a sapphire substrate. 1,4−6 Although GaAs on the c-plane sapphire appears to be an ideal system for integrated MWP (in particular) and photonics applications (in general), the growth of high-quality GaAs on the c-plane sapphire is difficult.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, its mechanical strength, high-temperature stability, insulating nature, and low cost make it an excellent candidate in harsh radiation environments, nuclear fields, and microwave photonics (MWP) applications. , On the other hand, GaAs is a direct band gap material, so the growth of high-quality GaAs on the c-plane sapphire can be used as a light source in MWP. Moreover, the exceptional matching between the coefficient of thermal expansion of sapphire and III–V semiconductors is a very important advantage over other substrates, such as silicon . The electron mobility is relatively high in GaAs, so in the same platform, electronics and optical devices would be integrated if high-quality GaAs can be grown on a sapphire substrate. ,− …”

Section: Introductionmentioning

confidence: 99%

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Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Kumar,

Saha,

Kuchuk

et al. 2023

Crystal Growth & Design

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High-quality GaAs on the c-plane sapphire has been achieved by employing a two-step growth technique, multiple annealing, and an AlAs nucleation layer using molecular beam epitaxy (MBE). The effect of growth parameters, namely, growth temperature, As2 flux, and low-temperature layer growth temperature (LTLGT) in two-step growth have been investigated. In all of the grown samples, the epitaxial orientation of the film is GaAs (111)A. Unlike the homoepitaxial GaAs (111)A MBE growth, where increasing the As2 flux improves the film quality, here the lowest As2 flux resulted in the best film quality. Very low LTLGT resulted in highly twinned material and film surface with many pits. Growth temperature also plays an important role, as seen by the exceptional structural and optical properties of samples grown at 650 °C, but at the cost of the rough film surface. We have observed low-temperature photoluminescence (PL) for all of the samples. However, for the first time, to the best of our knowledge, room-temperature PL (RT-PL) has been demonstrated from a heteroepitaxial GaAs (111)A film. This result is important because RT-PL from the epitaxial GaAs/c-plane sapphire will lead to the fabrication of GaAs laser on sapphire, which is an important functionality to realize photonic circuits on the sapphire platform.

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Section: Introductionmentioning

confidence: 99%