Epitaxial growth of high quality AlN films on metallic aluminum substrates

Abstract

AlN (0001) epitaxial films have been grown on Al (111) substrates with an in-plane epitaxial relationship of AlN[112 ¯0]//Al[11 ¯0] by pulsed laser deposition. The as-grown AlN films grown at 450 °C exhibited a very smooth and flat surface with a surface rootmean-square roughness less than 1.1 nm. There is no interfacial layer existing between AlN films and Al substrates, indicating an abrupt interface. The as-grown ~302 nm thick AlN films are almost fully relaxed only with an in-plane compressive strain of 0.16%. With the increase in growth temperature, the interfacial layer thickness increases, resulting in the degradation in the crystalline quality of the as-grown AlN films. These AlN films are of great interest for the commercial development of AlN-based devices.

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

“…In-situ MOVPE growth engineering has little effect however on the edge and mixed 2 | J. Name., 2012, 00, [1][2][3] This journal is © The Royal Society of Chemistry 2012 type dislocations. Hence alternative solutions capable of decreasing screw, edge and mixed TDs are required.…”

“…[1][2][3] The epitaxial growth of AlN buffer layers on heterosubstrates, such as sapphire, is an essential step in the advancement of deep ultra-violet (UV) based light emitting diodes (LEDs). 4 AlN is widely used as the basic template for most UV LEDs due to its UV transparency and small lattice mismatch to high Al% AlGaN, the alloy used for UV light emitting p-and n-layers as well as the active region in quantum wells 5,6 .…”

Adhesion strength and nucleation thermodynamics of four metals (Al, Cu, Ti, Zr) on AlN substrates

“…Although Al is rarely used in semiconductor devices, it is considered as a test case because of its chemical affinity toward AlN. Al does not react with AlN, but can be chemically adsorbed on AlN's surface and improve wetting of other metals to the substrate [8,19]. Besides, coherent and sharp interfaces could form when depositing AlN on pre-nitrided Al surfaces [8].…”

“…Al does not react with AlN, but can be chemically adsorbed on AlN's surface and improve wetting of other metals to the substrate [8,19]. Besides, coherent and sharp interfaces could form when depositing AlN on pre-nitrided Al surfaces [8]. Cu is widely used in printed circuits, but is known to be nonwetting to AlN [9,11,20].…”

Epitaxial CuN Films with Highly Tunable Lattice Constant for Lattice‐Matched Magnetic Heterostructures with Enhanced Thermal Stability

“…In addition, the epitaxial growth relationship can be obtained by the XRD measurement. [32,33] The in-plane ϕ scan of MgO substrate was also performed, as shown in Figure S1 in the Supporting Information. The epitaxial relationship between MgO and CuN can be determined to be MgO(100)[010]/CuN(100) [010].…”