Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Abstract

Hybrid integration of III-V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform (SPP). Epitaxial regrowth of III-V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the III-V mature multiregrowth technologies into the SPP. In the approach, an epitaxial InP layer grown on a 4 in. InP wafer is directly bonded onto a SiO 2 /Si 200 mm wafer. After InP substrate removal, the new template (InPoSi) is evaluated for epitaxial regrowth: an eight periods strain-compensated AlGaInAs multiquantum wells (MQW) heterostructure surrounded by two InP cladding layers is grown by metal-organic vapor phase epitaxy (MOVPE) simultaneously on the InPoSi substrate and on an InP substrate as a reference. For the first time, in situ reflectance and curvature measurements are carried out on InPoSi, enabling the assessment of surface roughness and thermal strain of the III-V materials during growth. High material quality is obtained as attested by X-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy.

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

“…Using elastic deformation Equation (2), the evaluated strain ε f ilm assessed is 400 ppm at growth temperature. This value is coherent with the one previously obtained from the relative curvature value measured on a simplified structure grown on InPoSi [36].…”

“…The PL signal peak at 1515 nm measured on InPoSi is 5 times more intense than the one measured for the structure grown on InP. This observation was already made before [20,23,36]. The difference of intensity can be explained by the enhancement of increased excitation and collection induced by the resonant cavity InP/SiO 2 /Si.…”

Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics

“…An alternate monolithic approach for large-scale integration of III-V materials is through heterogeneous integration of thin III-V membrane using a direct bonding technique followed by epitaxial regrowth [14][15][16][17][18][19]. This integration scheme is promising because it can overcome the challenges of the conventional monolithic integration approach, such as the high-density threading dislocation and anti-phase domain.…”

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

“…Consequently, direct bonding of III-V membrane layers on a Si substrate followed by epitaxial regrowth of InP-based material is an effective technique [44][45][46][47][48][49][50][51][52]. This technique overcomes the problems with direct epitaxial growth and bonding techniques.…”