Epitaxial growth of LaAlO3 on Si(001) using interface engineering

Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)

“…3(a-c)), the Si 2s core level remains at the binding energy corresponding to Si-Si bonds of the bulk Si substrate (150.7 eV). This result indicates that no silica or silicates are formed at this stage, which should appear at 154.3 and 153.4 eV, respectively [10][11][12]. Moreover, the presence of silica or/and silicates should also result in chemical shifts on the O 1s, Al 2p or La 4d substrate core levels.…”

Characteristics of high dielectric cubic Gd2O3 thin films deposited on cubic LaAlO3 by pulsed laser deposition

“…5 A conventional flat-plane capacitor with vertical metal-insulator-metal (MIM) structure was alternatively used to investigate the dielectric characteristics. From the characterization of capacitance-voltage (C-V) curves, the dielectric constant of the LAO substrate can be easily calculated to be 26 consisted with the dielectric constant of LAO (25-27) in literatures [9,15]. Subsequently, the capacitance of Gd 2 O 3 film of the sample C can be evaluated from the capacitance of the vertical Gd 2 O 3 /LAO structure by means of the series capacitance formula that is defined as 1=C Gd 2 O 3 =LAO ¼ 1=C Gd 2 O 3 þ 1=C LAO .…”

Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy

“…Note that the temperature range-from 550 to 750 1C-where LAO grows two dimensional (2D) and monocrystalline is relatively narrow: out of this range, rough or threedimensional (3D) LAO films are obtained [9].…”