Epitaxial growth of low temperature GaN using metal migration enhanced epitaxy for high-quality InGaN/GaN heterojunctions

Woo, Hyeonseok; Kim, Jongmin; Cho, Sangeun; Jo, Young‐Heon; Roh, Cheong Hyun; Lee, Jun Ho; Seo, Yong Gon; Kim, Hyungsang; Im, Hyunsik; Hahn, Cheol-Koo

doi:10.1016/j.spmi.2018.05.048

Cited by 3 publications

(3 citation statements)

References 32 publications

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“…In this way, the growth of high-quality quantum well structures can be achieved while controlling the diffusion of dopant atoms and maintaining the interface flatness of the quantum well, which is important for the fabrication of high-performance optoelectronic devices. Due to these advantages, the MEE mode has been widely used in the growth of III-V materials [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °C, which can lead to disorder scattering, dopant diffusion, and interface roughening, adversely affecting device performance. Lower growth temperatures enable the fabrication of high-speed optoelectronic devices by increasing arsenic antisite defects and reducing carrier lifetimes. This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200–250 °C. The InAs/GaAs multi-quantum wells with InAlAs barriers using MEE grown at 230 °C show good single crystals with sharp interfaces, without mismatch dislocations found. The Raman results reveal that the MEE mode enables the growth of (InAs)4(GaAs)3/InAlAs QWs with excellent periodicity, effectively reducing alloy scattering. The room temperature (RT) photoluminescence (PL) measurement shows the strong PL responses with narrow peaks, revealing the good quality of the MEE-grown QWs. The RT electron mobility of the sample grown in low-temperature MEE mode is as high as 2100 cm2/V*s. In addition, the photoexcited band-edge carrier lifetime was about 3.3 ps at RT. The high-quality superlattices obtained confirm MEE’s effectiveness for enabling advanced III-V device structures at reduced temperatures. This promises improved performance for applications in areas such as high-speed transistors, terahertz imaging, and optical communications.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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“…This spectacle of the InGaN based structures is correlated to the lattice relaxation during the growth process. Although, it lacks the morphological, strain relaxation and longer wavelength (green to red) emission of indium incorporation for InGaN alloys by MOCVD [23,24]. In this case, the trench defects surrounded InGaN layers are most likely to emit the green spectrum and it may play a deleterious role to the degradation of quality compared to blue spectrum [22,25].…”

Section: Introductionmentioning

confidence: 99%

Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition

Palanivelu

Ramesh

Arivazhagan

et al. 2019

Journal of Alloys and Compounds

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InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 µmole/min. The structural, morphological, optical and electrical properties of InGaN layers were investigated. Crystalline quality, dislocation densities comprising of screw and edge types in InGaN and GaN layer have been analyzed using High-Resolution X-ray Diffractometer (HRXRD). The composition of Indium (In) in the InGaN layers was estimated around 8-10% which was found to be dependent on the In flow rate. The strain between InGaN and underlying GaN layer have been analyzed through reciprocal space mapping studies along the (1 0 -1 5) plane in InGaN/GaN heterostructures. The features of V and trench defects were observed using scanning electron microscopy and atomic force microscopy respectively. The V and trench defect density has been correlated with the pre-existing threading dislocation density estimated using HRXRD measurements. Also the trench defects were observed to be a coalescence of V defects in InGaN layers. The photoluminescence results showed that band edge emission peaks of three different points (primary flat, centre, and Edge) were observed. These peak variations were found to be red shift behavior in all three points. These variations were due to the fluctuations in the Indium composition and corresponding trench & V defects respectively. The Hall measurements exhibit an alteration in semiconducting behavior with respect to V and trench defect surrounded InGaN layers. And also realized that compressive strain in underlying GaN can lead the high sheet concentration compared to the tensile strained underlying GaN layer. It clearly suggests that the V and trench defect surrounded InGaN layers contain the suitable candidates for next generation optoelectronics applications.

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“…In general, InGaN/GaN multiple quantum well (MQW) structures act as active regions for light emitting diode (LED), solar cells and thermoelectric applications. However, extending the emission range (From green to red) and improve the luminescence property of InGaN is still challenge [15]. Furthermore, to minimize the lattice mismatch between InN and GaN to obtain InGaN layer with high crystalline quality is another challenge [6,16,17].…”

Section: Introductionmentioning

confidence: 99%

Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

Prabakaran

Jayasakthi

Pradeep

et al. 2019

Applied Surface Science

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InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16-18% using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.

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Epitaxial growth of low temperature GaN using metal migration enhanced epitaxy for high-quality InGaN/GaN heterojunctions

Cited by 3 publications

References 32 publications

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition

Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

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